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Effect of antimony incorporation on the density, shape, and luminescence of InAs quantum dots
Jenn-Fang Chen
, C. H. Chiang
, Y. H. Wu
,
Li Chang
, J. Y. Chi
電子物理學系
材料科學與工程學系
研究成果
:
Article
›
同行評審
9
引文 斯高帕斯（Scopus）
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深入研究「Effect of antimony incorporation on the density, shape, and luminescence of InAs quantum dots」主題。共同形成了獨特的指紋。
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Keyphrases
Quantum Dots
100%
InAs Quantum Dots
100%
Luminescence
100%
Antimony
100%
Equivalent Pressure
55%
Blue Shift
22%
Surfactant Effect
22%
Atomic Force Microscopy
11%
Order of Magnitude
11%
Surface Morphology
11%
Quantum Well
11%
Photoluminescence
11%
Secondary Ion Mass Spectrometry
11%
Surface Recombination Velocity
11%
Emission Efficiency
11%
Periodic Structures
11%
Room-temperature Photoluminescence
11%
Terraces
11%
Buried Layer
11%
Sb Incorporation
11%
Ellipsoid
11%
Material Science
Density
100%
Quantum Dot
100%
Luminescence
100%
Antimony
100%
Photoluminescence
18%
Surface Active Agent
18%
Surface (Surface Science)
18%
Surface Morphology
9%
Quantum Well
9%
Secondary Ion Mass Spectrometry
9%
Periodic Structure
9%
Atomic Force Microscopy
9%
Earth and Planetary Sciences
Emissions
100%
Surfactant
66%
Photoluminescence
66%
Room Temperature
33%
Atomic Force Microscopy
33%
Mass Spectroscopy
33%
Chemistry
Antimony
100%
Quantum Dot
100%
Photoluminescence
18%
Surfactant
18%
Ambient Reaction Temperature
9%
Atomic Force Microscopy
9%
Secondary Ion Mass Spectroscopy
9%
Surface Recombination
9%
Engineering
Quantum Dot
100%
Surfactant
18%
Dot Layer
18%
Blueshift
18%
Surface Morphology
9%
Atomic Force Microscopy
9%
Quantum Well
9%
Room Temperature
9%
Surface Recombination Velocity
9%
Sb Incorporation
9%
Chemical Engineering
Surfactant
100%