Effect of Annealing Treatment on Performance of Ga₂O₃ Conductive-Bridging Random-Access Memory

Keyphrases

• Ga2O3 100%
• Annealing Treatment 100%
• Resistive Switching 100%
• Annealing Effect 100%
• Conductive Bridging Random Access Memory (CBRAM) 100%
• Annealing 66%
• High Density 66%
• X-ray Photoelectron Spectroscopy 33%
• Memory Performance 33%
• High Thermal Stability 33%
• Oxygen Vacancy 33%
• Memory Window 33%
• Material Characterization 33%
• Electrical Uniformity 33%
• Memory Application 33%
• Non-volatile Memory 33%
• Bipolar Resistive Switching 33%
• Switching Layer 33%
• Endurance Cycle 33%
• Switching Stability 33%
• High Switching 33%
• Ga2O3 Films 33%
• Amorphous Gallium Oxide 33%

Engineering

• Conductive 100%
• Bridging 100%
• Resistive 100%
• Random Access Memory 100%
• Ray Photoelectron Spectroscopy 33%
• Oxygen Vacancy 33%
• Nonvolatile Memory 33%
• Memory Performance 33%

Material Science

• Density 100%
• Film 50%
• Oxide Compound 50%
• Thermal Stability 50%
• Annealing 50%
• Gallium 50%
• Oxygen Vacancy 50%
• Photoemission Spectroscopy 50%