Effect of annealing temperature on physical and electrical properties of Bi_3.25La_0.75Ti₃O₁₂ thin films on Al₂O₃-buffered Si

Keyphrases

• Electrical Properties 100%
• Aluminum Oxide 100%
• Physical Properties 100%
• Annealing Temperature Effect 100%
• Memory Window 75%
• Capacitors 50%
• Ferroelectric Memory 50%
• Annealing 25%
• Sweeping 25%
• Temperature Range 25%
• Annealing Temperature 25%
• Leakage Current 25%
• High Temperature 25%
• High Thermal Stability 25%
• High Annealing Temperature 25%
• Very Large Scale Integration 25%
• Capacitance-voltage Curve 25%
• Technology Integration 25%
• Technology Process 25%

Material Science

• Thin Films 100%
• Al2O3 100%
• Physical Property 100%
• Ferroelectric Material 66%
• Annealing 66%
• Capacitor 66%
• Capacitance 33%

Engineering

• Thin Films 100%
• Annealing Temperature 100%
• Temperature Range 25%