Effect of annealing temperature on physical and electrical properties of Bi3.25La0.75Ti3O12 thin films on Al2O3-buffered Si

Chia Liang Sun*, San-Yuan Chen, Shi Bai Chen, Albert Chin


研究成果: Article同行評審

44 引文 斯高帕斯(Scopus)


The effect of annealing temperature, especially at high temperatures, on the physical and electrical properties of Bi3.25La 0.75Ti3O12 (BLT) thin films on Al 2O3 (10 nm)/Si has been investigated. The width of memory window in capacitance-voltage curves for BLT/Al2O3/Si capacitors annealed at temperature range of 700°C-950°C increases with increasing annealing temperature. At the highest annealing temperature of 950°C, a large ferroelectric memory window of 13 V is obtained under ±15 V sweep voltage, and this large ferroelectric memory window should be related to the reduced leakage current. Owing to the excellent electrical properties, the high-temperature stable BLT/Al2O3/Si capacitor is compatible with current very large scale integrated technology process.

頁(從 - 到)1984-1986
期刊Applied Physics Letters
出版狀態Published - 18 三月 2002


深入研究「Effect of annealing temperature on physical and electrical properties of Bi<sub>3.25</sub>La<sub>0.75</sub>Ti<sub>3</sub>O<sub>12</sub> thin films on Al<sub>2</sub>O<sub>3</sub>-buffered Si」主題。共同形成了獨特的指紋。