Effect of Annealing Temperature on Ferroelectric Properties of ALD Deposited TiN/HZO/TiN Capacitor

Jing-Wei  Lin; Jing-Wei  Lin; Jui-Sheng  Wu; Chun-Jung Su; Edward Yi Chang; Chun-Hsiung Lin

Effect of Annealing Temperature on Ferroelectric Properties of ALD Deposited TiN/HZO/TiN Capacitor

Jing-Wei Lin, Jing-Wei Lin, Jui-Sheng Wu, Chun-Jung Su, Edward Yi Chang, Chun-Hsiung Lin

研究成果: Paper › 同行評審

摘要

In this work, we demonstrated the effect of annealing temperature (400℃- 600℃) on ferroelectric properties and reliability of ALD deposited TiN/HZO/TiN metal-ferroelectric-metal (MFM) capacitor stack. The thickness (9-nm) of HZO ferroelectric layer and its interface with electrodes were revealed by transmission electron microscope. The formation of ferroelectric phase for HZO annealed at different temperature were investigated by grazing incidence X-ray diffraction.The sample annealed at 600℃ shows high remanent polarization (2Pr) of 52.9 μC/cm2 and excellent endurance performances with higher than 1011 cycles at 3 V without breakdown. The time-dependent dielectric breakdown (TDDB) also indicated that samples with the higher annealing temperature exhibited better tBD than the samples with the lower annealing temperature. It is suggested that higher annealing temperature can enhance the crystalline quality as well as interface in the ALD deposited TiN/HZO/TiN capacitor .

原文	English
出版狀態	Published - 10月 2021

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@conference{e3115d723f3b41e3a8a4a3aaec9966a3,

title = "Effect of Annealing Temperature on Ferroelectric Properties of ALD Deposited TiN/HZO/TiN Capacitor",

abstract = "In this work, we demonstrated the effect of annealing temperature (400℃- 600℃) on ferroelectric properties and reliability of ALD deposited TiN/HZO/TiN metal-ferroelectric-metal (MFM) capacitor stack. The thickness (9-nm) of HZO ferroelectric layer and its interface with electrodes were revealed by transmission electron microscope. The formation of ferroelectric phase for HZO annealed at different temperature were investigated by grazing incidence X-ray diffraction.The sample annealed at 600℃ shows high remanent polarization (2Pr) of 52.9 μC/cm2 and excellent endurance performances with higher than 1011 cycles at 3 V without breakdown. The time-dependent dielectric breakdown (TDDB) also indicated that samples with the higher annealing temperature exhibited better tBD than the samples with the lower annealing temperature. It is suggested that higher annealing temperature can enhance the crystalline quality as well as interface in the ALD deposited TiN/HZO/TiN capacitor .",

author = "Jing-Wei Lin and Jing-Wei Lin and Jui-Sheng Wu and Chun-Jung Su and Chang, {Edward Yi} and Chun-Hsiung Lin",

year = "2021",

month = oct,

language = "English",

}

TY - CONF

T1 - Effect of Annealing Temperature on Ferroelectric Properties of ALD Deposited TiN/HZO/TiN Capacitor

AU - Lin, Jing-Wei

AU - Wu, Jui-Sheng

AU - Su, Chun-Jung

AU - Chang, Edward Yi

AU - Lin, Chun-Hsiung

PY - 2021/10

Y1 - 2021/10

N2 - In this work, we demonstrated the effect of annealing temperature (400℃- 600℃) on ferroelectric properties and reliability of ALD deposited TiN/HZO/TiN metal-ferroelectric-metal (MFM) capacitor stack. The thickness (9-nm) of HZO ferroelectric layer and its interface with electrodes were revealed by transmission electron microscope. The formation of ferroelectric phase for HZO annealed at different temperature were investigated by grazing incidence X-ray diffraction.The sample annealed at 600℃ shows high remanent polarization (2Pr) of 52.9 μC/cm2 and excellent endurance performances with higher than 1011 cycles at 3 V without breakdown. The time-dependent dielectric breakdown (TDDB) also indicated that samples with the higher annealing temperature exhibited better tBD than the samples with the lower annealing temperature. It is suggested that higher annealing temperature can enhance the crystalline quality as well as interface in the ALD deposited TiN/HZO/TiN capacitor .

AB - In this work, we demonstrated the effect of annealing temperature (400℃- 600℃) on ferroelectric properties and reliability of ALD deposited TiN/HZO/TiN metal-ferroelectric-metal (MFM) capacitor stack. The thickness (9-nm) of HZO ferroelectric layer and its interface with electrodes were revealed by transmission electron microscope. The formation of ferroelectric phase for HZO annealed at different temperature were investigated by grazing incidence X-ray diffraction.The sample annealed at 600℃ shows high remanent polarization (2Pr) of 52.9 μC/cm2 and excellent endurance performances with higher than 1011 cycles at 3 V without breakdown. The time-dependent dielectric breakdown (TDDB) also indicated that samples with the higher annealing temperature exhibited better tBD than the samples with the lower annealing temperature. It is suggested that higher annealing temperature can enhance the crystalline quality as well as interface in the ALD deposited TiN/HZO/TiN capacitor .

M3 - Paper

ER -

Effect of Annealing Temperature on Ferroelectric Properties of ALD Deposited TiN/HZO/TiN Capacitor

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