An emission wavelength record emission wavelength of 1245 nm in double InGaAs/GaAs quantum wells without a straincompensated barrier is obtained by metalorganic chemical vapor deposition (MOCVD). The effect of annealing on highly strained InGaAs quantum wells is analyzed using phtoluminanescence spectra. By comparing devices p-type distributed Bragg reflector (p-DBR) growth temperatures, the preliminary results indicate that a device with a low p-DBR growth temperature of 670°C exhibits a low threshold current and a high light output power. A threshold current of 6.7 mA in an InGaAs vertical-cavity surface emitting laser (VCSEL) in CW operation is realized with an emission spectrum up to 1.26 μm.
|頁（從 - 到）||770-773|
|期刊||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版狀態||Published - 8 2月 2006|