Effect of annealing on low-threshold-current large-wavelength InGaAs quantum well vertical-cavity laser

I. Liang Chen; Wei Chou Hsu; Hao-Chung Kuo; Chia Pin Sung; Chih Hung Chiou; Jin Mei Wang; Yu Hsiang Chang; Hsin-Chieh Yu; Tsin Dong Lee

doi:10.1143/JJAP.45.770

Effect of annealing on low-threshold-current large-wavelength InGaAs quantum well vertical-cavity laser

I. Liang Chen, Wei Chou Hsu^*, Hao-Chung Kuo, Chia Pin Sung, Chih Hung Chiou, Jin Mei Wang, Yu Hsiang Chang, Hsin-Chieh Yu, Tsin Dong Lee

^*此作品的通信作者

研究成果: Article › 同行評審

摘要

An emission wavelength record emission wavelength of 1245 nm in double InGaAs/GaAs quantum wells without a straincompensated barrier is obtained by metalorganic chemical vapor deposition (MOCVD). The effect of annealing on highly strained InGaAs quantum wells is analyzed using phtoluminanescence spectra. By comparing devices p-type distributed Bragg reflector (p-DBR) growth temperatures, the preliminary results indicate that a device with a low p-DBR growth temperature of 670°C exhibits a low threshold current and a high light output power. A threshold current of 6.7 mA in an InGaAs vertical-cavity surface emitting laser (VCSEL) in CW operation is realized with an emission spectrum up to 1.26 μm.

原文	English
頁（從 - 到）	770-773
頁數	4
期刊	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
卷	45
發行號	2 A
DOIs	https://doi.org/10.1143/JJAP.45.770
出版狀態	Published - 8 2月 2006

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Chen, I. L., Hsu, W. C., Kuo, H-C., Sung, C. P., Chiou, C. H., Wang, J. M., Chang, Y. H., Yu, H-C., & Lee, T. D. (2006). Effect of annealing on low-threshold-current large-wavelength InGaAs quantum well vertical-cavity laser. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 45(2 A), 770-773. https://doi.org/10.1143/JJAP.45.770

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title = "Effect of annealing on low-threshold-current large-wavelength InGaAs quantum well vertical-cavity laser",

abstract = "An emission wavelength record emission wavelength of 1245 nm in double InGaAs/GaAs quantum wells without a straincompensated barrier is obtained by metalorganic chemical vapor deposition (MOCVD). The effect of annealing on highly strained InGaAs quantum wells is analyzed using phtoluminanescence spectra. By comparing devices p-type distributed Bragg reflector (p-DBR) growth temperatures, the preliminary results indicate that a device with a low p-DBR growth temperature of 670°C exhibits a low threshold current and a high light output power. A threshold current of 6.7 mA in an InGaAs vertical-cavity surface emitting laser (VCSEL) in CW operation is realized with an emission spectrum up to 1.26 μm.",

keywords = "InGaAs, MOCVD, VCSEL",

author = "Chen, {I. Liang} and Hsu, {Wei Chou} and Hao-Chung Kuo and Sung, {Chia Pin} and Chiou, {Chih Hung} and Wang, {Jin Mei} and Chang, {Yu Hsiang} and Hsin-Chieh Yu and Lee, {Tsin Dong}",

year = "2006",

month = feb,

day = "8",

doi = "10.1143/JJAP.45.770",

language = "English",

volume = "45",

pages = "770--773",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

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publisher = "Japan Society of Applied Physics",

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TY - JOUR

T1 - Effect of annealing on low-threshold-current large-wavelength InGaAs quantum well vertical-cavity laser

AU - Chen, I. Liang

AU - Hsu, Wei Chou

AU - Kuo, Hao-Chung

AU - Sung, Chia Pin

AU - Chiou, Chih Hung

AU - Wang, Jin Mei

AU - Chang, Yu Hsiang

AU - Yu, Hsin-Chieh

AU - Lee, Tsin Dong

PY - 2006/2/8

Y1 - 2006/2/8

N2 - An emission wavelength record emission wavelength of 1245 nm in double InGaAs/GaAs quantum wells without a straincompensated barrier is obtained by metalorganic chemical vapor deposition (MOCVD). The effect of annealing on highly strained InGaAs quantum wells is analyzed using phtoluminanescence spectra. By comparing devices p-type distributed Bragg reflector (p-DBR) growth temperatures, the preliminary results indicate that a device with a low p-DBR growth temperature of 670°C exhibits a low threshold current and a high light output power. A threshold current of 6.7 mA in an InGaAs vertical-cavity surface emitting laser (VCSEL) in CW operation is realized with an emission spectrum up to 1.26 μm.

AB - An emission wavelength record emission wavelength of 1245 nm in double InGaAs/GaAs quantum wells without a straincompensated barrier is obtained by metalorganic chemical vapor deposition (MOCVD). The effect of annealing on highly strained InGaAs quantum wells is analyzed using phtoluminanescence spectra. By comparing devices p-type distributed Bragg reflector (p-DBR) growth temperatures, the preliminary results indicate that a device with a low p-DBR growth temperature of 670°C exhibits a low threshold current and a high light output power. A threshold current of 6.7 mA in an InGaAs vertical-cavity surface emitting laser (VCSEL) in CW operation is realized with an emission spectrum up to 1.26 μm.

KW - InGaAs

KW - MOCVD

KW - VCSEL

UR - http://www.scopus.com/inward/record.url?scp=32244448781&partnerID=8YFLogxK

U2 - 10.1143/JJAP.45.770

DO - 10.1143/JJAP.45.770

M3 - Article

AN - SCOPUS:32244448781

SN - 0021-4922

VL - 45

SP - 770

EP - 773

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 2 A

ER -

Effect of annealing on low-threshold-current large-wavelength InGaAs quantum well vertical-cavity laser

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