@inproceedings{900cd75b0516455ba88b2e4908b4b4be,
title = "Effect of AlN spacer on the AlGaN/GaN HEMT device performance at millimeter-wave frequencies",
abstract = "The effect of the AlN spacer on the performance of AlGaN/GaN HEMT devices at 38 GHz is experimentally investigated. The measurement results revealed that the device with spacer showed superior performance in terms of the maximum drain current. RF wise, substantial improvement in the cut-off frequency and the maximum oscillation frequency was also observed for devices with spacer. A saturated output power density of 4.21 W/mm with 35.02% power-added efficiency (PAE) at 38 GHz were achieved for device with 70nm gate length.",
keywords = "AlGaN/GaN, AlN spacer, Cut-off frequency, HEMT, Maximum oscillation frequency",
author = "Chun Wang and Heng-Tung Hsu and Huang Ting-Jui and Fan, {Jun Kai} and Chang, {Edward Yi}",
note = "Publisher Copyright: {\textcopyright} 2018 IEICE; 30th Asia-Pacific Microwave Conference, APMC 2018 ; Conference date: 06-11-2018 Through 09-11-2018",
year = "2018",
month = jul,
day = "2",
doi = "10.23919/APMC.2018.8617568",
language = "English",
series = "Asia-Pacific Microwave Conference Proceedings, APMC",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1208--1210",
booktitle = "2018 Asia-Pacific Microwave Conference, APMC 2018 - Proceedings",
address = "United States",
}