Effect of AlInGaN barrier layers with various TMGa flows on optoelectronic characteristics of near UV light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy

Yi Keng Fu*, Yu Hsuan Lu, Ren Hao Jiang, Bo Chun Chen, Yen Hsiang Fang, Rong Xuan, Yan Kuin Su, Chia Feng Lin, Jenn-Fang Chen

*此作品的通信作者

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

Near ultraviolet light-emitting diodes (LEDs) with quaternary AlInGaN quantum barriers (QBs) are grown by atmospheric pressure metalorganic vapor phase epitaxy. The indium mole fraction of AlInGaN QB could be enhanced as we increased the TMG flow rate. Both the wavelength shift in EL spectra and forward voltage at 20 mA current injection were reduced by using AlInGaN QB. Under 100 mA current injection, the LED output power with Al0.089In 0.035Ga0.876N QB can be enhanced by 15.9%, compared to LED with GaN QB. It should be attributed to a reduction of lattice mismatch induced polarization mismatch in the active layer.

原文English
頁(從 - 到)142-145
頁數4
期刊Solid-State Electronics
62
發行號1
DOIs
出版狀態Published - 8月 2011

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