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Economical Silicon Nanowire Growth via Cooling Controlled Solid–Liquid–Solid Mechanism
Thao Nguyen, Chu Hsiu Hsu,
Der Hsien Lien
,
Yu Sheng Su
*
*
此作品的通信作者
電子研究所
電機工程學系
國際半導體產業學院
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引文 斯高帕斯(Scopus)
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Keyphrases
Silicon Nanowires (SiNWs)
100%
Nanowire Growth
100%
Nanowires
75%
Gas Flow
50%
Silicon Substrate
25%
Aspect Ratio
25%
Heat Sink
25%
Silicon Wafer
25%
Material Cost
25%
Cooling Rate
25%
Heating Temperature
25%
Processing Cost
25%
Vapor-liquid-solid
25%
Continuous Growth
25%
Temperature Decrease
25%
Slow Cooling
25%
High Gas
25%
Nickel Thin Film
25%
Solid Precursor
25%
Controllable Morphology
25%
Cooling Conditions
25%
Nucleation Growth
25%
Vertical Temperature Gradient
25%
Eutectic Structure
25%
High Toxicity
25%
Cooling Control
25%
Nanomaterials Fabrication
25%
Nickel Precursor
25%
Gaseous Precursors
25%
Engineering
Nanowire
100%
Gas Flow
22%
Thin Films
11%
Silicon Substrate
11%
Nanomaterial
11%
Silicon Wafer
11%
Eutectics
11%
Material Cost
11%
Cooling Rate
11%
Heating Temperature
11%
Slow Cooling
11%
Processing Cost
11%
Cooling Condition
11%
Aspect Ratio
11%
Thermal Gradient
11%
Temperature Gradients
11%
Material Science
Silicon
100%
Nanowire
100%
Gas Flow
22%
Thin Films
11%
Nucleation
11%
Silicon Wafer
11%
Nanostructured Material
11%
Chemical Engineering
Nanowire
100%
Scalability
11%
Thermal Gradient
11%
Film
11%