Dynamic Switching Characteristics of 1 A Forward Current β -Ga 2 O 3 Rectifiers

Jiancheng Yang; Fan Ren; Yen Ting Chen; Yu-Te Liao; Chin Wei Chang; Jenshan Lin; Marko J. Tadjer; S. J. Pearton; Akito Kuramata

doi:10.1109/JEDS.2018.2877495

Dynamic Switching Characteristics of 1 A Forward Current β -Ga ₂ O ₃ Rectifiers

Jiancheng Yang, Fan Ren, Yen Ting Chen, Yu-Te Liao, Chin Wei Chang, Jenshan Lin, Marko J. Tadjer, S. J. Pearton^*, Akito Kuramata

^*此作品的通信作者

電機工程學系

研究成果: Article › 同行評審

33 引文斯高帕斯（Scopus）

摘要

An inductive load test circuit was used to measure the switching performance of fieldplated edge-terminated Schottky rectifiers with a reverse breakdown voltage of 760 V (0.1 cm diameter, 7.85 × 10.3 cm ² area) and an absolute forward current of 1 A on 8 m thick epitaxial β -Ga ₂ O ₃ drift layers. The recovery characteristics for these vertical geometry β -Ga ₂ O ₃ Schottky rectifiers switching from forward current of 1 A to reverse off-state voltage of -300 V showed a recovery time (trr) of 64 ns. There was no significant temperature dependence of trr up to 150 °C.

原文	English
文章編號	8502878
頁（從 - 到）	62-69
頁數	8
期刊	IEEE Journal of the Electron Devices Society
卷	7
DOIs	https://doi.org/10.1109/JEDS.2018.2877495
出版狀態	Published - 23 10月 2018

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10.1109/JEDS.2018.2877495

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title = "Dynamic Switching Characteristics of 1 A Forward Current β -Ga 2 O 3 Rectifiers",

abstract = " An inductive load test circuit was used to measure the switching performance of fieldplated edge-terminated Schottky rectifiers with a reverse breakdown voltage of 760 V (0.1 cm diameter, 7.85 × 10.3 cm 2 area) and an absolute forward current of 1 A on 8 m thick epitaxial β -Ga 2 O 3 drift layers. The recovery characteristics for these vertical geometry β -Ga 2 O 3 Schottky rectifiers switching from forward current of 1 A to reverse off-state voltage of -300 V showed a recovery time (trr) of 64 ns. There was no significant temperature dependence of trr up to 150 °C.",

keywords = "Gallium oxide, Schottky diode, rectifiers",

author = "Jiancheng Yang and Fan Ren and Chen, {Yen Ting} and Yu-Te Liao and Chang, {Chin Wei} and Jenshan Lin and Tadjer, {Marko J.} and Pearton, {S. J.} and Akito Kuramata",

note = "Publisher Copyright: {\textcopyright} 2013 IEEE.",

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doi = "10.1109/JEDS.2018.2877495",

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T1 - Dynamic Switching Characteristics of 1 A Forward Current β -Ga 2 O 3 Rectifiers

AU - Yang, Jiancheng

AU - Ren, Fan

AU - Chen, Yen Ting

AU - Liao, Yu-Te

AU - Chang, Chin Wei

AU - Lin, Jenshan

AU - Tadjer, Marko J.

AU - Pearton, S. J.

AU - Kuramata, Akito

PY - 2018/10/23

Y1 - 2018/10/23

N2 - An inductive load test circuit was used to measure the switching performance of fieldplated edge-terminated Schottky rectifiers with a reverse breakdown voltage of 760 V (0.1 cm diameter, 7.85 × 10.3 cm 2 area) and an absolute forward current of 1 A on 8 m thick epitaxial β -Ga 2 O 3 drift layers. The recovery characteristics for these vertical geometry β -Ga 2 O 3 Schottky rectifiers switching from forward current of 1 A to reverse off-state voltage of -300 V showed a recovery time (trr) of 64 ns. There was no significant temperature dependence of trr up to 150 °C.

AB - An inductive load test circuit was used to measure the switching performance of fieldplated edge-terminated Schottky rectifiers with a reverse breakdown voltage of 760 V (0.1 cm diameter, 7.85 × 10.3 cm 2 area) and an absolute forward current of 1 A on 8 m thick epitaxial β -Ga 2 O 3 drift layers. The recovery characteristics for these vertical geometry β -Ga 2 O 3 Schottky rectifiers switching from forward current of 1 A to reverse off-state voltage of -300 V showed a recovery time (trr) of 64 ns. There was no significant temperature dependence of trr up to 150 °C.

KW - Gallium oxide

KW - Schottky diode

KW - rectifiers

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JF - IEEE Journal of the Electron Devices Society

M1 - 8502878

ER -

Dynamic Switching Characteristics of 1 A Forward Current β -Ga 2 O 3 Rectifiers

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Dynamic Switching Characteristics of 1 A Forward Current β -Ga ₂ O ₃ Rectifiers