Dynamic on-resistance stability of SiC and GaN power devices during high-frequency (100–300 kHz) hard switching and zero voltage switching operations

Zhen Hong Huang, Shun Wei Tang, Chao Ta Fan, Ming Cheng Lin, Tian Li Wu*

*此作品的通信作者

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

To our knowledge, this is the first study to investigate the high-frequency (100–300 kHz) switching stability of SiC power devices at a Vds of 800 V during hard switching (HSW) and zero voltage switching (ZVS) operations. In this study, we proposed a topology for evaluating the switching dependencies (i.e., temperature, frequency, current, and duty cycle) in order to determine their flexibility in identifying circuit-level switching stability. We also evaluated the high-frequency switching stability of GaN power devices for comparison purposes. Overall, the results indicated that compared with GaN power devices, SiC power devices have higher dynamic drain-to-source on-resistance stability during ZVS and HSW high-frequency switching operations.

原文English
文章編號114983
期刊Microelectronics Reliability
145
DOIs
出版狀態Published - 6月 2023

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