Dynamic On-Resistance and Threshold Voltage Instability Evaluation Circuit for Power GaN HEMTs Devices

Rustam Kumar, Tian Li Wu*

*此作品的通信作者

研究成果: Article同行評審

摘要

The p-GaN gate-based gallium nitride (GaN) power devices are a promising technology for power electronics applications. However, these devices suffer from dynamic on-resistance (Rds, on) and gate threshold voltage (Vth) shifts during operation. The dynamic Rds, on is typically evaluated in a switching circuit, whereas the Vth shift is measured using a curve tracer. Both parameter evaluations require distinct setups and do not represent the same operating conditions. To overcome these drawbacks, this letter proposes a circuit capable of measuring both parameters in a hard-switching operation under the same operating conditions. Using this circuit, an EPC2014 C device is characterized, and both parameters are reported.

原文English
頁(從 - 到)11706-11709
頁數4
期刊IEEE Transactions on Industrial Electronics
71
發行號9
DOIs
出版狀態Accepted/In press - 2023

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