Dynamic observation of phase transformation behaviors in indium(iii) selenide nanowire based phase change memory

Yu Ting Huang, Chun Wei Huang, Jui Yuan Chen, Yi Hsin Ting, Kuo Chang Lu, Yu Lun Chueh, Wen-Wei Wu*

*此作品的通信作者

研究成果: Article同行評審

30 引文 斯高帕斯(Scopus)

摘要

Phase change random access memory (PCRAM) has been extensively investigated for its potential applications in next-generation nonvolatile memory. In this study, indium(III) selenide (In2Se3) was selected due to its high resistivity ratio and lower programming current. Au/In2Se3-nanowire/Au phase change memory devices were fabricated and measured systematically in an in situ transmission electron microscope to perform a RESET/SET process under pulsed and dc voltage swept mode, respectively. During the switching, we observed the dynamic evolution of the phase transformation process. The switching behavior resulted from crystalline/amorphous change and revealed that a long pulse width would induce the amorphous or polycrystalline state by different pulse amplitudes, supporting the improvement of the writing speed, retention, and endurance of PCRAM.

原文English
頁(從 - 到)9457-9462
頁數6
期刊ACS Nano
8
發行號9
DOIs
出版狀態Published - 23 九月 2014

指紋

深入研究「Dynamic observation of phase transformation behaviors in indium(iii) selenide nanowire based phase change memory」主題。共同形成了獨特的指紋。

引用此