dV/dt Breakdown in Power MOSFET's

D. S. Kuo; Chen-Ming Hu; M. H. Chi

doi:10.1109/EDL.1983.25623

dV/dt Breakdown in Power MOSFET's

D. S. Kuo, Chen-Ming Hu, M. H. Chi

國際半導體產業學院

研究成果: Article › 同行評審

10 引文斯高帕斯（Scopus）

摘要

A model for dV/dt breakdown in power MOSFET's is proposed. This model allows quantitative analysis of dV/dt limitation in power MOSFET circuits. Experimental results show good agreement with theoretical predictions.

原文	English
頁（從 - 到）	1-2
頁數	2
期刊	IEEE Electron Device Letters
卷	4
發行號	1
DOIs	https://doi.org/10.1109/EDL.1983.25623
出版狀態	Published - 1 1月 1983

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10.1109/EDL.1983.25623

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abstract = "A model for dV/dt breakdown in power MOSFET's is proposed. This model allows quantitative analysis of dV/dt limitation in power MOSFET circuits. Experimental results show good agreement with theoretical predictions.",

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dV/dt Breakdown in Power MOSFET's

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