dV/dt Breakdown in Power MOSFET's

D. S. Kuo, Chen-Ming Hu, M. H. Chi

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

A model for dV/dt breakdown in power MOSFET's is proposed. This model allows quantitative analysis of dV/dt limitation in power MOSFET circuits. Experimental results show good agreement with theoretical predictions.

原文English
頁(從 - 到)1-2
頁數2
期刊IEEE Electron Device Letters
4
發行號1
DOIs
出版狀態Published - 1 1月 1983

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