Dual Silicon Oxycarbide Accelerated Growth of Well-Ordered Graphitic Networks for Electronic and Thermal Applications

Paul D. Garman, Jared M. Johnson, Vishank Talesara, Hao Yang, Xinpeng Du, Junjie Pan, Dan Zhang, Jianfeng Yu, Eusebio Cabrera, Ying Chieh Yen, Jose Castro, Wu Lu, Ji Cheng Zhao, Jinwoo Hwang, L. James Lee*

*此作品的通信作者

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

While effective in circumventing the transfer process of graphene films from metals to insulating substrates, graphene chemical vapor deposition (CVD) methods which grow directly on the surface of insulating substrates suffer from slow growth rates, lack of covalent bonding between both graphene layers within the film and the entire film and its substrate, and the inability to grow films beyond nanoscale thickness. An atmospheric pressure chemical vapor deposition (APCVD) process is described utilizing preplaced silicone rubber and continuously fed tetraethyl orthosilicate (TEOS) as dual silicon oxycarbide (SiOC) sources to facilitate fast surface coverage (30 s) and z-thickness growth (136 nm min −1 ) of graphitic coatings consisting of a network of covalently bonded graphene layers directly on quartz while providing strong adhesion between the coating and the substrate via a semiconductive transition layer. This process can produce graphitic networks for a wide range of products including transparent conducting and semiconductive nanoscale graphene films, anisotropic micrometer-scale coatings with in-plane thermal conductivity >1000 W m −1 K −1 and standalone flakes with >40 µm thickness for thermal management applications.

原文English
文章編號1800324
期刊Advanced Materials Technologies
4
發行號5
DOIs
出版狀態Published - 5月 2019

指紋

深入研究「Dual Silicon Oxycarbide Accelerated Growth of Well-Ordered Graphitic Networks for Electronic and Thermal Applications」主題。共同形成了獨特的指紋。

引用此