Dual-material gate approach to suppression of random-dopant-induced characteristic fluctuation in 16nm metal-oxide-semiconductor field-effect-transistor devices

In this work, we explore for the first time dual-material gate (DMG) and inverse DMG devices for suppressing the random-dopant (RD)-induced characteristic fluctuation in 16nm metal-oxide-semiconductor field-effect-transistor (MOSFET) devices. The physical mechanism of suppressing the characteristic fluctuation of DMG devices is observed and discussed. The achieved improvement in suppressing the RD-induced threshold voltage, on-state current, and off-state current fluctuations are 28, 12.3, and 59%, respectively. To further suppress the fluctuations, an approach that combines the DMG method and channel-doping-profile engineering is also advanced and explored. The results of our study show that among the suppression techniques, the use of the DMG device with an inverse lateral asymmetric channel-doping-profile has good immunity to fluctuation.