Dual Gate Oxide CMOS Process on 4H-SiC

Bing Yue Tsui*, Chia Lung Hung, Te Kai Tsai, Li Jung Lin, Ting Wei Wang, Po-Hung Chen

*此作品的通信作者

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

A dual gate oxide 4H-SiC CMOS process is reported for the first time. A 20-nm-thick gate oxide for 10 V operation and 40-nm-thick gate oxide for 20 V operation are realized. The low voltage CMOS can be used for logic circuits and the high voltage CMOS can be used for gate driver and power MOSFETs. Fundamental characteristics of the gate oxides and MOSFETs are presented. CMOS inverter, ring oscillator, level shifter, and gate driver are all demonstrated on a single chip.

原文English
主出版物標題2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
發行者Institute of Electrical and Electronics Engineers Inc.
頁面1-2
頁數2
ISBN(電子)9781665409230
DOIs
出版狀態Published - 2022
事件2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 - Hsinchu, Taiwan
持續時間: 18 4月 202221 4月 2022

出版系列

名字2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

Conference

Conference2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
國家/地區Taiwan
城市Hsinchu
期間18/04/2221/04/22

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