Dual Gate Oxide CMOS Process on 4H-SiC

Bing Yue Tsui; Chia Lung Hung; Te Kai Tsai; Li Jung Lin; Ting Wei Wang; Po Hung Chen

doi:10.1109/VLSI-TSA54299.2022.9771044

Dual Gate Oxide CMOS Process on 4H-SiC

Bing Yue Tsui^*, Chia Lung Hung, Te Kai Tsai, Li Jung Lin, Ting Wei Wang, Po Hung Chen

^*此作品的通信作者

研究成果: Conference contribution › 同行評審

2 引文斯高帕斯（Scopus）

摘要

A dual gate oxide 4H-SiC CMOS process is reported for the first time. A 20-nm-thick gate oxide for 10 V operation and 40-nm-thick gate oxide for 20 V operation are realized. The low voltage CMOS can be used for logic circuits and the high voltage CMOS can be used for gate driver and power MOSFETs. Fundamental characteristics of the gate oxides and MOSFETs are presented. CMOS inverter, ring oscillator, level shifter, and gate driver are all demonstrated on a single chip.

原文	English
主出版物標題	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	1-2
頁數	2
ISBN（電子）	9781665409230
DOIs	https://doi.org/10.1109/VLSI-TSA54299.2022.9771044
出版狀態	Published - 2022
事件	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 - Hsinchu, 台灣持續時間: 18 4月 2022 → 21 4月 2022

出版系列

名字	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

Conference

Conference	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
國家/地區	台灣
城市	Hsinchu
期間	18/04/22 → 21/04/22

存取文件

10.1109/VLSI-TSA54299.2022.9771044

其它文件與鏈接

Link to publication in Scopus

引用此

Tsui, B. Y., Hung, C. L., Tsai, T. K., Lin, L. J., Wang, T. W., & Chen, P. H. (2022). Dual Gate Oxide CMOS Process on 4H-SiC. 於 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 (頁 1-2). (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA54299.2022.9771044

@inproceedings{d5b4490e9c7541468d2fa0963de9c448,

title = "Dual Gate Oxide CMOS Process on 4H-SiC",

abstract = "A dual gate oxide 4H-SiC CMOS process is reported for the first time. A 20-nm-thick gate oxide for 10 V operation and 40-nm-thick gate oxide for 20 V operation are realized. The low voltage CMOS can be used for logic circuits and the high voltage CMOS can be used for gate driver and power MOSFETs. Fundamental characteristics of the gate oxides and MOSFETs are presented. CMOS inverter, ring oscillator, level shifter, and gate driver are all demonstrated on a single chip.",

author = "Tsui, {Bing Yue} and Hung, {Chia Lung} and Tsai, {Te Kai} and Lin, {Li Jung} and Wang, {Ting Wei} and Chen, {Po Hung}",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 ; Conference date: 18-04-2022 Through 21-04-2022",

year = "2022",

doi = "10.1109/VLSI-TSA54299.2022.9771044",

language = "English",

series = "2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "1--2",

booktitle = "2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022",

address = "美國",

}

Tsui, BY, Hung, CL, Tsai, TK, Lin, LJ, Wang, TW & Chen, PH 2022, Dual Gate Oxide CMOS Process on 4H-SiC. 於 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022, Institute of Electrical and Electronics Engineers Inc., 頁 1-2, 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022, Hsinchu, 台灣, 18/04/22. https://doi.org/10.1109/VLSI-TSA54299.2022.9771044

Dual Gate Oxide CMOS Process on 4H-SiC. / Tsui, Bing Yue; Hung, Chia Lung; Tsai, Te Kai 等.
2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. Institute of Electrical and Electronics Engineers Inc., 2022. p. 1-2 (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - Dual Gate Oxide CMOS Process on 4H-SiC

AU - Tsui, Bing Yue

AU - Hung, Chia Lung

AU - Tsai, Te Kai

AU - Lin, Li Jung

AU - Wang, Ting Wei

AU - Chen, Po Hung

PY - 2022

Y1 - 2022

N2 - A dual gate oxide 4H-SiC CMOS process is reported for the first time. A 20-nm-thick gate oxide for 10 V operation and 40-nm-thick gate oxide for 20 V operation are realized. The low voltage CMOS can be used for logic circuits and the high voltage CMOS can be used for gate driver and power MOSFETs. Fundamental characteristics of the gate oxides and MOSFETs are presented. CMOS inverter, ring oscillator, level shifter, and gate driver are all demonstrated on a single chip.

AB - A dual gate oxide 4H-SiC CMOS process is reported for the first time. A 20-nm-thick gate oxide for 10 V operation and 40-nm-thick gate oxide for 20 V operation are realized. The low voltage CMOS can be used for logic circuits and the high voltage CMOS can be used for gate driver and power MOSFETs. Fundamental characteristics of the gate oxides and MOSFETs are presented. CMOS inverter, ring oscillator, level shifter, and gate driver are all demonstrated on a single chip.

UR - http://www.scopus.com/inward/record.url?scp=85130428750&partnerID=8YFLogxK

U2 - 10.1109/VLSI-TSA54299.2022.9771044

DO - 10.1109/VLSI-TSA54299.2022.9771044

M3 - Conference contribution

AN - SCOPUS:85130428750

T3 - 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

SP - 1

EP - 2

BT - 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

Y2 - 18 April 2022 through 21 April 2022

ER -

Tsui BY, Hung CL, Tsai TK, Lin LJ, Wang TW, Chen PH. Dual Gate Oxide CMOS Process on 4H-SiC. 於 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. Institute of Electrical and Electronics Engineers Inc. 2022. p. 1-2. (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022). doi: 10.1109/VLSI-TSA54299.2022.9771044

Dual Gate Oxide CMOS Process on 4H-SiC

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Conference

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