Dual-gate igzo tft for threshold-voltage compensation in amoled pixel circuit

Lu Sheng Chou, Hao Lin Chiu, Bo Cheng Chen, Ya Hsiang Tai

研究成果: Conference article同行評審

18 引文 斯高帕斯(Scopus)

摘要

In addition to the gate electrode at the bottom, a dual-gate InGaZnO4 (a-IGZO) thin film transistor (TFT) has a secondary gate electrode on the top. The threshold voltage of the TFT using the bottom-gate in its normal operation can be controlled by the top-gate. Based on this phenomenon, a new concept of using the top-gate to compensate threshold voltage variation is proposed. This new technique is demonstrated in two pixel circuits of active-matrix organic light-emitting diode and verified by the measurement results.

原文English
頁(從 - 到)768-771
頁數4
期刊Digest of Technical Papers - SID International Symposium
43
發行號1
DOIs
出版狀態Published - 2012
事件49th SID International Symposium, Seminar and Exhibition, dubbed Display Week, 2012 - Boston, United States
持續時間: 3 6月 20128 6月 2012

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