Dual-central-wavelength passively mode-locked diffusion-bonded Nd:YVO4/Nd:GdVO4 laser with a semiconductor saturable absorber mirror

F. L. Chang, C. L. Sung, T. L. Huang, T. W. Wu, H. H. Cho, H. C. Liang, Yung-Fu Chen*

*此作品的通信作者

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

A dual-central-wavelength passively mode-locked laser with full modulation in the 0.31 THz optical beating is achieved by using a diffusion-bonded Nd:YVO4/Nd:GdVO4 crystal and a semiconductor saturable absorber mirror. The output power of the dual-band emission is well balanced by tuning the focal position of the pump waist. At a pump power of 13 W, the total output power is up to 2.7 W with a repetition rate of 297.9 MHz. The autocorrelation traces clearly reveal the synchronization of the dual-band emission. Moreover, an analytical model is developed to manifest the multi-pulse structure caused by the etalon effect of the gain medium. More important, we experimentally verify that the etalon effect can be completely eliminated by using the wedge-cut diffusion-bonded Nd:YVO4/Nd:GdVO4 crystal.

原文English
文章編號085803
頁數7
期刊Laser Physics Letters
14
發行號8
DOIs
出版狀態Published - 8月 2017

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