Dual-band switchable low noise amplifier for 5-GHz wireless LAN radio receivers

Wen Shen Wuen; Kuei-Ann Wen

doi:10.1109/MWSCAS.2002.1186847

Dual-band switchable low noise amplifier for 5-GHz wireless LAN radio receivers

Wen Shen Wuen^*, Kuei-Ann Wen

^*此作品的通信作者

研究成果: Paper › 同行評審

16 引文斯高帕斯（Scopus）

摘要

The paper presents a dual-band switchable low noise amplifier implemented in 0.25-μm CMOS technology for 5-GHz wireless local area network (WLAN) applications. Equipped with a PMOS capacitor together with the inductive load, the LNA is able to operate at the lower or the upper band at 5-GHz by 1-bit control signal. The LNA exhibits over 17 dB power gain, 3.5 dB noise figure and input 1-dB compression point -23 dBm in both frequency bands. The LNA draws 9.5 mA from 2.5 V supply.

原文	English
DOIs	https://doi.org/10.1109/MWSCAS.2002.1186847
出版狀態	Published - 1 3月 2003
事件	2002 45th Midwest Symposium on Circuits and Systems - Tulsa, OK, United States 持續時間: 4 8月 2002 → 7 8月 2002

Conference

Conference	2002 45th Midwest Symposium on Circuits and Systems
國家/地區	United States
城市	Tulsa, OK
期間	4/08/02 → 7/08/02

存取文件

10.1109/MWSCAS.2002.1186847

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Link to publication in Scopus

引用此

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title = "Dual-band switchable low noise amplifier for 5-GHz wireless LAN radio receivers",

abstract = "The paper presents a dual-band switchable low noise amplifier implemented in 0.25-μm CMOS technology for 5-GHz wireless local area network (WLAN) applications. Equipped with a PMOS capacitor together with the inductive load, the LNA is able to operate at the lower or the upper band at 5-GHz by 1-bit control signal. The LNA exhibits over 17 dB power gain, 3.5 dB noise figure and input 1-dB compression point -23 dBm in both frequency bands. The LNA draws 9.5 mA from 2.5 V supply.",

author = "Wuen, {Wen Shen} and Kuei-Ann Wen",

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N2 - The paper presents a dual-band switchable low noise amplifier implemented in 0.25-μm CMOS technology for 5-GHz wireless local area network (WLAN) applications. Equipped with a PMOS capacitor together with the inductive load, the LNA is able to operate at the lower or the upper band at 5-GHz by 1-bit control signal. The LNA exhibits over 17 dB power gain, 3.5 dB noise figure and input 1-dB compression point -23 dBm in both frequency bands. The LNA draws 9.5 mA from 2.5 V supply.

AB - The paper presents a dual-band switchable low noise amplifier implemented in 0.25-μm CMOS technology for 5-GHz wireless local area network (WLAN) applications. Equipped with a PMOS capacitor together with the inductive load, the LNA is able to operate at the lower or the upper band at 5-GHz by 1-bit control signal. The LNA exhibits over 17 dB power gain, 3.5 dB noise figure and input 1-dB compression point -23 dBm in both frequency bands. The LNA draws 9.5 mA from 2.5 V supply.

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Dual-band switchable low noise amplifier for 5-GHz wireless LAN radio receivers

摘要

Conference

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