Dual-Band Power Amplifier Design at 28/38 GHz for 5G New Radio Applications

Yi Fan Tsao, Heng Shou Hsu, Joachim Wurfl, Heng Tung Hsu*


研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)


This paper presents the design of a dual-band power amplifier (PA) featuring similar performance at 28 GHz and 38 GHz. In the new radio (NR) of the fifth generation (5G) communication system, the inter-band carrier aggregation technique is commonly adopted for data rate enhancement. In such configuration, operation at both bands of the 5G frequency range 2 (FR2) spectrum is often necessary. The stacked-FET topology was adopted for mitigation of the gain roll-off with frequency to achieve similar performance at both frequency bands. Implemented in the commercial 0.15-μm gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) technology, the PA delivered a small signal gain of 18.5/18 dB, an output power at saturation (Psat) of 28.5/28.2 dBm, and a peak power-added efficiency (PAE) of 39%/36% at 28/38 GHz, respectively. The measurement results have demonstrated great potential of the proposed PA for 5G NR applications.

頁(從 - 到)77826-77836
期刊IEEE Access
出版狀態Published - 2022


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