Drift-diffusion modeling for impurity photovoltaic devices

Albert Lin*, Jamie D. Phillips

*此作品的通信作者

研究成果: Article同行評審

36 引文 斯高帕斯(Scopus)

摘要

A 1-D drift-diffusion modeling for impurity photovoltaics is presented. The model is based on the self-consistent solution of Poisson's equation and carrier continuity equations incorporating generation and recombination mechanisms including the intermediate states. The model is applied to a prototypical solar cell device, where strong space charge effects and reduced conversion efficiency are identified for the case of lightly doped absorption regions. A doping compensation scheme is proposed to mitigate the space charge effects, with optimal doping corresponding to one-half the concentration of the intermediate states. The compensated doping device design provides calculated conversion efficiencies of approximately 40%, which is similar to the maximum expected values from prior 0-D models. The carrier transport between intermediate levels is shown to be noncritical for achieving the efficiency limit predicted by 0-D models. The qualitative behavior of the model is compared to existing experimental data on quantum dot solar cells.

原文English
文章編號5306157
頁(從 - 到)3168-3174
頁數7
期刊IEEE Transactions on Electron Devices
56
發行號12
DOIs
出版狀態Published - 1 十二月 2009

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