Drastically Reduced Dark Current by Pulse-Time-Modulated Plasma for Precise Micro Lens Fabrication in Highly Sensitive CCD Image Sensor

Yasushi Ishikawa*, Mitsuru Okigawa, Yoshinari Ichihashi, Seiji Samukawa

*此作品的通信作者

研究成果: Conference article同行評審

摘要

Highly sensitive charge coupled device image sensors (CCD) have some serious problems such as increased dark current and interface states induced by the plasma etching processes. Especially, the UV photons (200nm to 300nm) irradiation generates this damage. To solve this problem we investigated optimum fluorocarbon gas chemistries and the effect of pulse-time-modulated (TM) plasma. We found that the dark current in CCDs was drastically reduced by selecting gas chemistries and using TM plasma.

原文English
頁(從 - 到)393-396
頁數4
期刊Technical Digest - International Electron Devices Meeting
出版狀態Published - 2003
事件IEEE International Electron Devices Meeting - Washington, DC, United States
持續時間: 8 12月 200310 12月 2003

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