Double δ-doped enhancement-mode InGaP/AlGaAs/InGaAs pseudomorphic high electron mobility transistor for linearity application

Li Hsin Chu*, Heng-Tung Hsu, Edward Yi Chang, Tser Lung Lee, Sze Hung Chen, Yi Chung Lien, Chun Yen Chang

*此作品的通信作者

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

A high linearity and high efficiency enhancement-mode InGaP/AlGaAs/InGaAs pseudomorphic high electron mobility transistor (PHEMT) for single supply operation has been developed. The low voltage operation is achieved by the very low knee voltage of the device and the linearity is improved by the optimizing concentrations of the two S-doped layers. Biased at drain-to-source voltage VDS = 2 V, the fabricated 0.5 × 200 μn2 device exhibited a maximum transconductance of 448 mS/ mm. The measured minimum noise figure (NFmin) was 0.86dB with 12.21 dB associated gain at 10 GHz. The device shows a high output third-order intercept point (OIP3)-P 1dB of 13.2 dB and a high power efficiency of 35% when under wideband code-division multiple-access (W-CDMA) modulation signal.

原文English
頁(從 - 到)L932-L934
期刊Japanese Journal of Applied Physics, Part 2: Letters
45
發行號33-36
DOIs
出版狀態Published - 1 9月 2006

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