Double δ-doped enhancement-mode InGaP/AlGaAs/InGaAs pseudomorphic high electron mobility transistor for linearity application

Li Hsin Chu; Heng-Tung Hsu; Edward Yi Chang; Tser Lung Lee; Sze Hung Chen; Yi Chung Lien; Chun Yen Chang

doi:10.1143/JJAP.45.L932

Double δ-doped enhancement-mode InGaP/AlGaAs/InGaAs pseudomorphic high electron mobility transistor for linearity application

Li Hsin Chu^*, Heng-Tung Hsu, Edward Yi Chang, Tser Lung Lee, Sze Hung Chen, Yi Chung Lien, Chun Yen Chang

^*此作品的通信作者

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

摘要

A high linearity and high efficiency enhancement-mode InGaP/AlGaAs/InGaAs pseudomorphic high electron mobility transistor (PHEMT) for single supply operation has been developed. The low voltage operation is achieved by the very low knee voltage of the device and the linearity is improved by the optimizing concentrations of the two S-doped layers. Biased at drain-to-source voltage V_DS = 2 V, the fabricated 0.5 × 200 μn² device exhibited a maximum transconductance of 448 mS/ mm. The measured minimum noise figure (NF_min) was 0.86dB with 12.21 dB associated gain at 10 GHz. The device shows a high output third-order intercept point (OIP3)-P _1dB of 13.2 dB and a high power efficiency of 35% when under wideband code-division multiple-access (W-CDMA) modulation signal.

原文	English
頁（從 - 到）	L932-L934
期刊	Japanese Journal of Applied Physics, Part 2: Letters
卷	45
發行號	33-36
DOIs	https://doi.org/10.1143/JJAP.45.L932
出版狀態	Published - 1 9月 2006

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@article{84f97aaad94747caa09818d11d7c6b77,

title = "Double δ-doped enhancement-mode InGaP/AlGaAs/InGaAs pseudomorphic high electron mobility transistor for linearity application",

abstract = "A high linearity and high efficiency enhancement-mode InGaP/AlGaAs/InGaAs pseudomorphic high electron mobility transistor (PHEMT) for single supply operation has been developed. The low voltage operation is achieved by the very low knee voltage of the device and the linearity is improved by the optimizing concentrations of the two S-doped layers. Biased at drain-to-source voltage VDS = 2 V, the fabricated 0.5 × 200 μn2 device exhibited a maximum transconductance of 448 mS/ mm. The measured minimum noise figure (NFmin) was 0.86dB with 12.21 dB associated gain at 10 GHz. The device shows a high output third-order intercept point (OIP3)-P 1dB of 13.2 dB and a high power efficiency of 35% when under wideband code-division multiple-access (W-CDMA) modulation signal.",

keywords = "Enhancement-mode, High linearity, InGaP, OIP3, PHEMT",

author = "Chu, {Li Hsin} and Heng-Tung Hsu and Chang, {Edward Yi} and Lee, {Tser Lung} and Chen, {Sze Hung} and Lien, {Yi Chung} and Chang, {Chun Yen}",

year = "2006",

month = sep,

day = "1",

doi = "10.1143/JJAP.45.L932",

language = "English",

volume = "45",

pages = "L932--L934",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

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TY - JOUR

T1 - Double δ-doped enhancement-mode InGaP/AlGaAs/InGaAs pseudomorphic high electron mobility transistor for linearity application

AU - Chu, Li Hsin

AU - Hsu, Heng-Tung

AU - Chang, Edward Yi

AU - Lee, Tser Lung

AU - Chen, Sze Hung

AU - Lien, Yi Chung

AU - Chang, Chun Yen

PY - 2006/9/1

Y1 - 2006/9/1

N2 - A high linearity and high efficiency enhancement-mode InGaP/AlGaAs/InGaAs pseudomorphic high electron mobility transistor (PHEMT) for single supply operation has been developed. The low voltage operation is achieved by the very low knee voltage of the device and the linearity is improved by the optimizing concentrations of the two S-doped layers. Biased at drain-to-source voltage VDS = 2 V, the fabricated 0.5 × 200 μn2 device exhibited a maximum transconductance of 448 mS/ mm. The measured minimum noise figure (NFmin) was 0.86dB with 12.21 dB associated gain at 10 GHz. The device shows a high output third-order intercept point (OIP3)-P 1dB of 13.2 dB and a high power efficiency of 35% when under wideband code-division multiple-access (W-CDMA) modulation signal.

AB - A high linearity and high efficiency enhancement-mode InGaP/AlGaAs/InGaAs pseudomorphic high electron mobility transistor (PHEMT) for single supply operation has been developed. The low voltage operation is achieved by the very low knee voltage of the device and the linearity is improved by the optimizing concentrations of the two S-doped layers. Biased at drain-to-source voltage VDS = 2 V, the fabricated 0.5 × 200 μn2 device exhibited a maximum transconductance of 448 mS/ mm. The measured minimum noise figure (NFmin) was 0.86dB with 12.21 dB associated gain at 10 GHz. The device shows a high output third-order intercept point (OIP3)-P 1dB of 13.2 dB and a high power efficiency of 35% when under wideband code-division multiple-access (W-CDMA) modulation signal.

KW - Enhancement-mode

KW - High linearity

KW - InGaP

KW - OIP3

KW - PHEMT

UR - http://www.scopus.com/inward/record.url?scp=33748763354&partnerID=8YFLogxK

U2 - 10.1143/JJAP.45.L932

DO - 10.1143/JJAP.45.L932

M3 - Article

AN - SCOPUS:33748763354

SN - 0021-4922

VL - 45

SP - L932-L934

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 33-36

ER -

Double δ-doped enhancement-mode InGaP/AlGaAs/InGaAs pseudomorphic high electron mobility transistor for linearity application

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