Doping profiles studied by scanning tunneling spectroscopy

Yi Chiu*, M. L. Reed, T. E. Schlesinger

*此作品的通信作者

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

Tunneling spectra have been measured at various locations on uniformly doped, ion-implanted, and epitaxial silicon samples. We find that the I-V characteristics consistently vary with the variation of doping concentrations. Significant differences in the I-V curves are observed between n- and p-type samples. Combined with the high resolution of scanning tunneling microscopes (STM), this principle can be used to obtain two-dimensional doping profiles in submicron VLSI circuits.

原文English
頁(從 - 到)1715-1716
頁數2
期刊Applied Physics Letters
60
發行號14
DOIs
出版狀態Published - 1 十二月 1992

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