TY - JOUR
T1 - Dominant channels of exciton spin relaxation in photoexcited self-assembled (In,Ga)As quantum dots
AU - Liao, Yu Huai
AU - Climente, Juan I.
AU - Cheng, Shun-Jen
PY - 2011/4/22
Y1 - 2011/4/22
N2 - We present a comprehensive theoretical investigation of spin relaxation processes of excitons in photoexcited self-assembled quantum dots. The exciton spin relaxations are considered between dark- and bright-exciton states via the channels created by various spin-admixture mechanisms, including electron Rashba and Dresselhaus spin-orbital couplings (SOCs), hole linear and hole cubic SOCs, and electron hyperfine interactions, incorporated with single- and double-phonon processes. The hole-Dresselhaus SOC is identified as the dominant spin-admixture mechanism, leading to relaxation rates as fast as ∼10 -2 ns-1, consistent with recent observations. Moreover, due to significant electron-hole exchange interactions, single-phonon processes are unusually dominant over two-phonon ones in a photoexcited dot even at temperatures as high as 15K.
AB - We present a comprehensive theoretical investigation of spin relaxation processes of excitons in photoexcited self-assembled quantum dots. The exciton spin relaxations are considered between dark- and bright-exciton states via the channels created by various spin-admixture mechanisms, including electron Rashba and Dresselhaus spin-orbital couplings (SOCs), hole linear and hole cubic SOCs, and electron hyperfine interactions, incorporated with single- and double-phonon processes. The hole-Dresselhaus SOC is identified as the dominant spin-admixture mechanism, leading to relaxation rates as fast as ∼10 -2 ns-1, consistent with recent observations. Moreover, due to significant electron-hole exchange interactions, single-phonon processes are unusually dominant over two-phonon ones in a photoexcited dot even at temperatures as high as 15K.
UR - http://www.scopus.com/inward/record.url?scp=79961112715&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.83.165317
DO - 10.1103/PhysRevB.83.165317
M3 - Article
AN - SCOPUS:79961112715
SN - 1098-0121
VL - 83
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 16
M1 - 165317
ER -