DLTS characterization of InAs self-assembled quantum dots

V. V. Ilchenko; Sheng-Di Lin; C. P. Lee; O. V. Tretyak

doi:10.1109/ISCS.2000.947126

DLTS characterization of InAs self-assembled quantum dots

V. V. Ilchenko^*, Sheng-Di Lin, C. P. Lee, O. V. Tretyak

^*此作品的通信作者

研究成果 › 同行評審

摘要

Deep level capacitance transient spectroscopy was used to obtain the energy level and the capture characteristics of InAs self-assembled quantum dots embedded in GaAs. A specially designed structure was used for the DLTS measurement for enhanced resolution. This structure allows us to detect capacitance relaxation signal from a single layer of quantum dots and to separate this signal from those of the DX centers inside the structure. The DLTS spectra with different filling pulses and different rate windows provide clear information on the energy level and the capture characteristics of the quantum dots.

原文	English
頁面	43-48
頁數	6
DOIs	https://doi.org/10.1109/ISCS.2000.947126
出版狀態	Published - 2000
事件	27th International Symposium on Compound Semiconductors - Monterey, CA, 美國持續時間: 2 10月 2000 → 5 10月 2000

Conference

Conference	27th International Symposium on Compound Semiconductors
國家/地區	美國
城市	Monterey, CA
期間	2/10/00 → 5/10/00

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10.1109/ISCS.2000.947126

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title = "DLTS characterization of InAs self-assembled quantum dots",

abstract = "Deep level capacitance transient spectroscopy was used to obtain the energy level and the capture characteristics of InAs self-assembled quantum dots embedded in GaAs. A specially designed structure was used for the DLTS measurement for enhanced resolution. This structure allows us to detect capacitance relaxation signal from a single layer of quantum dots and to separate this signal from those of the DX centers inside the structure. The DLTS spectra with different filling pulses and different rate windows provide clear information on the energy level and the capture characteristics of the quantum dots.",

author = "Ilchenko, {V. V.} and Sheng-Di Lin and Lee, {C. P.} and Tretyak, {O. V.}",

year = "2000",

doi = "10.1109/ISCS.2000.947126",

language = "English",

pages = "43--48",

note = "27th International Symposium on Compound Semiconductors ; Conference date: 02-10-2000 Through 05-10-2000",

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T1 - DLTS characterization of InAs self-assembled quantum dots

AU - Ilchenko, V. V.

AU - Lin, Sheng-Di

AU - Lee, C. P.

AU - Tretyak, O. V.

PY - 2000

Y1 - 2000

N2 - Deep level capacitance transient spectroscopy was used to obtain the energy level and the capture characteristics of InAs self-assembled quantum dots embedded in GaAs. A specially designed structure was used for the DLTS measurement for enhanced resolution. This structure allows us to detect capacitance relaxation signal from a single layer of quantum dots and to separate this signal from those of the DX centers inside the structure. The DLTS spectra with different filling pulses and different rate windows provide clear information on the energy level and the capture characteristics of the quantum dots.

AB - Deep level capacitance transient spectroscopy was used to obtain the energy level and the capture characteristics of InAs self-assembled quantum dots embedded in GaAs. A specially designed structure was used for the DLTS measurement for enhanced resolution. This structure allows us to detect capacitance relaxation signal from a single layer of quantum dots and to separate this signal from those of the DX centers inside the structure. The DLTS spectra with different filling pulses and different rate windows provide clear information on the energy level and the capture characteristics of the quantum dots.

UR - http://www.scopus.com/inward/record.url?scp=0034425165&partnerID=8YFLogxK

U2 - 10.1109/ISCS.2000.947126

DO - 10.1109/ISCS.2000.947126

M3 - Paper

AN - SCOPUS:0034425165

SP - 43

EP - 48

T2 - 27th International Symposium on Compound Semiconductors

Y2 - 2 October 2000 through 5 October 2000

ER -

DLTS characterization of InAs self-assembled quantum dots

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