Dislocation reduction in GaN film using Ga-lean GaN buffer layer and migration enhanced epitaxy

Yuen Yee Wong, Edward Yi Chang, Yue Han Wu, Mantu K. Hudait, Tsung Hsi Yang, Jet Rung Chang, Jui Tai Ku, Wu-Ching Chou, Chiang Yao Chen, Jer Shen Maa, Yueh Chin Lin

研究成果: Article同行評審

11 引文 斯高帕斯(Scopus)

摘要

A GaN buffer layer grown under Ga-lean conditions by plasma-assisted molecular beam epitaxy (PAMBE) was used to reduce the dislocation density in a GaN film grown on a sapphire substrate. The Ga-lean buffer, with inclined trench walls on its surface, provided an effective way to bend the propagation direction of dislocations, and it reduced the dislocation density through recombination and annihilation processes. As a result, the edge dislocation density in the GaN film was reduced by approximately two orders of magnitude to 2 × 108 cm- 2. The rough surface of the Ga-lean buffer was recovered using migration enhanced epitaxy (MEE), a process of alternating deposition cycle of Ga atoms and N2 radicals, during the PAMBE growth. By combining these two methods, a GaN film with high-crystalline-quality and atomically-flat surface can be achieved by PAMBE on a lattice mismatch substrate.

原文English
頁(從 - 到)6208-6213
頁數6
期刊Thin Solid Films
519
發行號19
DOIs
出版狀態Published - 29 七月 2011

指紋

深入研究「Dislocation reduction in GaN film using Ga-lean GaN buffer layer and migration enhanced epitaxy」主題。共同形成了獨特的指紋。

引用此