Dislocation-induced fields in piezoelectric AlGaN/GaN bimaterial heterostructures

Xueli Han*, Ernie Pan

*此作品的通信作者

研究成果: Article同行評審

15 引文 斯高帕斯(Scopus)

摘要

The fields produced by an arbitrary three-dimensional dislocation loop in general anisotropic piezoelectric bimaterials are analyzed. A line-integral formula is developed for the coupled elastic and electric fields induced by a general dislocation loop in piezoelectric bimaterials, and an analytical solution is also obtained for the fields due to a straight dislocation line segment. As a numerical example, the fields, especially the piezoelectric polarization and polarization charge density, induced by a square dislocation loop in AlGaN/GaN heterostructures are studied. Our numerical results show various interesting features associated with different kinds of dislocations relative to the interface. Particularly, we find that when an edge dislocation is parallel and close to the interface, the dislocation-induced peak charge density on the interface becomes comparable to the two-dimensional electric gas (2DEGs) charge density, thus contributing to the 2DEGs on the AlGaN/GaN interface.

原文English
文章編號103501
期刊Journal of Applied Physics
112
發行號10
DOIs
出版狀態Published - 15 11月 2012

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