Direct Tunneling and Related TMR Anomalies in Magnetic Tunnel Junctions with Embedded Nanoparticles

DIego Turenne, Artur Useinov*

*此作品的通信作者

研究成果: Article同行評審

摘要

This article shows simulations of the electron direct tunneling through the MgO insulating layer in the magnetic tunnel junction with embedded non-magnetic and magnetic nanoparticles (NPs). The approach of weak magnetic NPs is considered at low temperature, where the related values of the electron wavenumbers, as well as exchange energy in NPs, are a few times smaller than in the bulk. The results show the opportunities for the significant enhancement of the tunnel magnetoresistance (TMR) with voltage. The theory predicts and explains some anomalous periodicity of TMR with voltage including the stable plateau at some conditions.

原文English
文章編號8902283
期刊IEEE Transactions on Magnetics
55
發行號12
DOIs
出版狀態Published - 15 11月 2019

指紋

深入研究「Direct Tunneling and Related TMR Anomalies in Magnetic Tunnel Junctions with Embedded Nanoparticles」主題。共同形成了獨特的指紋。

引用此