Direct Synthesis and Practical Bandgap Estimation of Multilayer Arsenene Nanoribbons

Hsu Sheng Tsai; Sheng Wen Wang; Ching Hung Hsiao; Chia Wei Chen; Hao Ouyang; Yu Lun Chueh; Hao-Chung Kuo; Jenq Horng Liang

doi:10.1021/acs.chemmater.5b04949

Direct Synthesis and Practical Bandgap Estimation of Multilayer Arsenene Nanoribbons

Hsu Sheng Tsai^*, Sheng Wen Wang, Ching Hung Hsiao, Chia Wei Chen, Hao Ouyang, Yu Lun Chueh, Hao-Chung Kuo, Jenq Horng Liang

^*此作品的通信作者

光電工程學系

研究成果: Article › 同行評審

230 引文斯高帕斯（Scopus）

摘要

A study was conducted to demonstrate direct synthesis and practical bandgap estimation of multilayer arsenene nanoribbons. The cross-sectional layer structure at nanoscale was monitored by transmission electron microscopy (TEM). The SiO₂ capped on the surface was deposited by an electron beam evaporator to protect the thin film from the damage caused by the focus ion beam (FIB) during the TEM sample preparation. Beyond synthesis of multilayer arsenene, the bandgap of multilayer arsenene was estimated by measuring the photoluminescence (PL) characteristic.

原文	English
頁（從 - 到）	425-429
頁數	5
期刊	Chemistry of Materials
卷	28
發行號	2
DOIs	https://doi.org/10.1021/acs.chemmater.5b04949
出版狀態	Published - 1 1月 2016

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AU - Hsiao, Ching Hung

AU - Chen, Chia Wei

AU - Ouyang, Hao

AU - Chueh, Yu Lun

AU - Kuo, Hao-Chung

AU - Liang, Jenq Horng

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N2 - A study was conducted to demonstrate direct synthesis and practical bandgap estimation of multilayer arsenene nanoribbons. The cross-sectional layer structure at nanoscale was monitored by transmission electron microscopy (TEM). The SiO2 capped on the surface was deposited by an electron beam evaporator to protect the thin film from the damage caused by the focus ion beam (FIB) during the TEM sample preparation. Beyond synthesis of multilayer arsenene, the bandgap of multilayer arsenene was estimated by measuring the photoluminescence (PL) characteristic.

AB - A study was conducted to demonstrate direct synthesis and practical bandgap estimation of multilayer arsenene nanoribbons. The cross-sectional layer structure at nanoscale was monitored by transmission electron microscopy (TEM). The SiO2 capped on the surface was deposited by an electron beam evaporator to protect the thin film from the damage caused by the focus ion beam (FIB) during the TEM sample preparation. Beyond synthesis of multilayer arsenene, the bandgap of multilayer arsenene was estimated by measuring the photoluminescence (PL) characteristic.

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JF - Chemistry of Materials

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Direct Synthesis and Practical Bandgap Estimation of Multilayer Arsenene Nanoribbons

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