@inproceedings{03006188fd04451e987363410643142a,
title = "Direct patterning on low dielectric constant materials with electron beam lithography",
abstract = "Summary form only given. Electron beam (EB) lithography and direct patterning of low-dielectric-constant (low-k) materials are two crucial issues of nanofabrication technologies. In this paper, we propose direct patterning of negative tone hydrogen silsesquioxane (HSQ) film of which can replace the use of resist processes including resist coating and stripping.",
author = "Chen, {Ben Chang} and Lai, {Yee Kai} and Fu-Hsiang Ko and Chou, {Cheng Tung} and Chen, {Hsuen Li}",
note = "Publisher Copyright: {\textcopyright} 2001 Japan Soc. Of Applied Physics.; International Microprocesses and Nanotechnology Conference, MNC 2001 ; Conference date: 31-10-2001 Through 02-11-2001",
year = "2001",
doi = "10.1109/IMNC.2001.984143",
language = "English",
series = "2001 International Microprocesses and Nanotechnology Conference, MNC 2001",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "168--169",
booktitle = "2001 International Microprocesses and Nanotechnology Conference, MNC 2001",
address = "United States",
}