Direct observation of the lateral nonuniform channel doping profile in submicron MOSFET's from an anomalous charge pumping measurement results

Steve S. Chung*, S. M. Cheng, G. H. Lee, Jyh-Chyurn Guo

*此作品的通信作者

研究成果: Conference article同行評審

5 引文 斯高帕斯(Scopus)

摘要

This paper reports a new model and characterization of the reverse short channel effect (RSCE) as a result of the lateral nonuniform channel doping profile in submicron MOSFET's. The anomalous increase in the charge pumping current with decreasing channel length has been observed experimentally for the first time by using a charge pumping measurement. This is attributed to the enhanced nonuniform channel doping profile with the decreasing channel length as a result of the interstitial imperfections caused by OED or S/D implant. A simple and accurate model is proposed to determine the effective lateral nonuniform doping profile along the channel. The effective channel doping profile calculated from the new approach presents an obvious doping enhancement near the drain region of submicron devices by comparing with that of long channel devices. The simulated threshold voltages and I-V characteristics based on this profile show excellent agreement with the experimental data.

原文English
頁(從 - 到)103-104
頁數2
期刊Digest of Technical Papers - Symposium on VLSI Technology
DOIs
出版狀態Published - 1 12月 1995
事件Proceedings of the 1995 Symposium on VLSI Technology - Kyoto, Jpn
持續時間: 6 6月 19958 6月 1995

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