Direct experimental evidence of the hole capture by resonant levels in boron doped silicon

Shun-Tung Yen*, V. Tulupenko, E. S. Cheng, A. Dalakyan, C. P. Lee, K. A. Chao, V. Belykh, A. Abramov, V. Ryzhkov

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

The variation of hole population for the localized and resonant states of B-doped Si excited by sequences of short electric-field pulses has been investigated by the technique of time-resolved spectroscopy. The capture of holes by resonant levels is verified. A new spectral line earlier theoretically predicted was experimentally observed for the first time.

原文English
主出版物標題PHYSICS OF SEMICONDUCTORS
主出版物子標題27th International Conference on the Physics of Semiconductors, ICPS-27
頁面1192-1193
頁數2
DOIs
出版狀態Published - 30 六月 2005
事件PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
持續時間: 26 七月 200430 七月 2004

出版系列

名字AIP Conference Proceedings
772
ISSN(列印)0094-243X
ISSN(電子)1551-7616

Conference

ConferencePHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
國家/地區United States
城市Flagstaff, AZ
期間26/07/0430/07/04

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