@inproceedings{dacf93e796e24a5d8c8b722a6586f362,
title = "Direct experimental evidence of the hole capture by resonant levels in boron doped silicon",
abstract = "The variation of hole population for the localized and resonant states of B-doped Si excited by sequences of short electric-field pulses has been investigated by the technique of time-resolved spectroscopy. The capture of holes by resonant levels is verified. A new spectral line earlier theoretically predicted was experimentally observed for the first time.",
author = "Shun-Tung Yen and V. Tulupenko and Cheng, {E. S.} and A. Dalakyan and Lee, {C. P.} and Chao, {K. A.} and V. Belykh and A. Abramov and V. Ryzhkov",
year = "2005",
month = jun,
day = "30",
doi = "10.1063/1.1994538",
language = "English",
isbn = "0735402574",
series = "AIP Conference Proceedings",
pages = "1192--1193",
booktitle = "PHYSICS OF SEMICONDUCTORS",
note = "PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 ; Conference date: 26-07-2004 Through 30-07-2004",
}