Direct determination of interface and bulk traps in stacked HfO2 dielectrics using charge pumping method

Tuo-Hung Hou, M. F. Wang, K. L. Mai, Y. M. Lin, M. H. Yang, L. G. Yao, Y. Jin, S. C. Chen, M. S. Liang

研究成果: Conference contribution同行評審

6 引文 斯高帕斯(Scopus)

摘要

For the first time, trap density at SiO2/Si interface, HfO2/SiO2 interface, and HfO2 bulk of stacked HfO2/SiO2 dielectrics are quantified respectively with a simple charge pumping method. It was found that the amount of each individual type of traps can be well correlated to specific process conditions as well as device performance, which makes such innovative characterization method very powerful for process optimization of high-k dielectrics.

原文English
主出版物標題2004 IEEE International Reliability Physics Symposium Proceedings - 42nd Annual, IRPS 2004
發行者Institute of Electrical and Electronics Engineers Inc.
頁面581-582
頁數2
2004-January
版本January
ISBN(電子)078038315X
DOIs
出版狀態Published - 12 7月 2004
事件2004 IEEE International Reliability Physics Symposium Proceedings, 42nd Annual - Phoenix, AZ., United States
持續時間: 25 4月 200429 4月 2004

出版系列

名字IEEE International Reliability Physics Symposium Proceedings
號碼January
2004-January
ISSN(列印)1541-7026

Conference

Conference2004 IEEE International Reliability Physics Symposium Proceedings, 42nd Annual
國家/地區United States
城市Phoenix, AZ.
期間25/04/0429/04/04

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