Direct Current Reactive Sputtering Deposition and Plasma Annealing of an Epitaxial TiHfN Film on Si (001)

Ping Hsun Wu, Kun An Chiu*, Fu Han Shih, Yu Siang Fang, Thi Hien Do, Wei Chun Chen, Li Chang*

*此作品的通信作者

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

Deposition of a heteroepitaxial TiHfN film with a growth rate of about 1 μm/h was successfully achieved on a Si (001) substrate at a temperature above 700 °C by direct current magnetron reactive sputtering of a Ti0.6Hf0.4 (in atomic fraction) target with an Ar/N2 gas mixture. Annealing of the as-deposited TiHfN/Si sample at a temperature above 1000 °C using microwave plasma with H2/N2 gas was performed to further improve the TiHfN film’s quality. X-ray diffraction results show that the heteroepitaxial TiHfN film on Si exhibits a cube-on-cube relationship as {001}TiHfN//{001}Si and <110>TiHfN//<110>Si. X-ray rocking curve measurements show that the full width at half maximum of (200)TiHfN is 1.36° for the as-deposited TiHfN film, while it is significantly reduced to 0.53° after microwave plasma annealing. The surface morphologies of the as-deposited and annealed TiHfN films are smooth, with a surface roughness of around ~2 nm. Cross-sectional scanning/transmission electron microscopy (S/TEM) shows a reduction in defects in the annealed film, and X-ray photoelectron spectroscopy shows that the film composition remains unchanged. Additionally, S/TEM examinations with atomic resolution illustrate domain matching epitaxy (DME) between TiHfN and Si at the interface. The TiHfN films have good electrical conducting properties with resistivities of 40–45 μΩ·cm.

原文English
文章編號183
期刊Coatings
13
發行號1
DOIs
出版狀態Published - 1月 2023

指紋

深入研究「Direct Current Reactive Sputtering Deposition and Plasma Annealing of an Epitaxial TiHfN Film on Si (001)」主題。共同形成了獨特的指紋。

引用此