Direct comparison of GaN-based e-mode architectures (recessed MISHEMT and p-GaN HEMTs) processed on 200mm GaN-on-Si with Au-free technology

Denis Marcon, Marleen Van Hove, Brice De Jaeger, Niels Posthuma, Dirk Wellekens, Shuzhen You, Xuanwu Kang, Tian-Li Wu, Maarten Willems, Steve Stoffels, Stefaan Decoutere

研究成果: Conference contribution同行評審

36 引文 斯高帕斯(Scopus)

摘要

Gallium nitride transistors are going to dominate the power semiconductor market in the coming years. The natural form of GaN-based devices is "normally-on" or depletion mode (d-mode). Despite these type of devices can be used in power semiconductor systems by means of special drivers or in a cascode package solution, yet the market demands for normally-off or enhancement mode (e-mode) devices. In this work, we directly compare and analyze the two most common approaches to obtain GaN-based e-mode devices: recessed gate MISHEMTs and p-GaN HEMTs. Both approaches have their pro's and con's as well as their critical process steps.

原文English
主出版物標題Gallium Nitride Materials and Devices X
編輯Jen-Inn Chyi, Hadis Morkoc, Hiroshi Fujioka
發行者SPIE
ISBN(電子)9781628414530
DOIs
出版狀態Published - 1 1月 2015
事件Gallium Nitride Materials and Devices X - San Francisco, United States
持續時間: 9 2月 201512 2月 2015

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
9363
ISSN(列印)0277-786X
ISSN(電子)1996-756X

Conference

ConferenceGallium Nitride Materials and Devices X
國家/地區United States
城市San Francisco
期間9/02/1512/02/15

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