Direct comparison of GaN-based e-mode architectures (recessed MISHEMT and p-GaN HEMTs) processed on 200mm GaN-on-Si with Au-free technology

Denis Marcon; Marleen Van Hove; Brice De Jaeger; Niels Posthuma; Dirk Wellekens; Shuzhen You; Xuanwu Kang; Tian-Li Wu; Maarten Willems; Steve Stoffels; Stefaan Decoutere

doi:10.1117/12.2077806

Direct comparison of GaN-based e-mode architectures (recessed MISHEMT and p-GaN HEMTs) processed on 200mm GaN-on-Si with Au-free technology

Denis Marcon, Marleen Van Hove, Brice De Jaeger, Niels Posthuma, Dirk Wellekens, Shuzhen You, Xuanwu Kang, Tian-Li Wu, Maarten Willems, Steve Stoffels, Stefaan Decoutere

國際半導體產業學院

研究成果: Conference contribution › 同行評審

37 引文斯高帕斯（Scopus）

摘要

Gallium nitride transistors are going to dominate the power semiconductor market in the coming years. The natural form of GaN-based devices is "normally-on" or depletion mode (d-mode). Despite these type of devices can be used in power semiconductor systems by means of special drivers or in a cascode package solution, yet the market demands for normally-off or enhancement mode (e-mode) devices. In this work, we directly compare and analyze the two most common approaches to obtain GaN-based e-mode devices: recessed gate MISHEMTs and p-GaN HEMTs. Both approaches have their pro's and con's as well as their critical process steps.

原文	English
主出版物標題	Gallium Nitride Materials and Devices X
編輯	Jen-Inn Chyi, Hadis Morkoc, Hiroshi Fujioka
發行者	SPIE
ISBN（電子）	9781628414530
DOIs	https://doi.org/10.1117/12.2077806
出版狀態	Published - 1 1月 2015
事件	Gallium Nitride Materials and Devices X - San Francisco, 美國持續時間: 9 2月 2015 → 12 2月 2015

出版系列

名字	Proceedings of SPIE - The International Society for Optical Engineering
卷	9363
ISSN（列印）	0277-786X
ISSN（電子）	1996-756X

Conference

Conference	Gallium Nitride Materials and Devices X
國家/地區	美國
城市	San Francisco
期間	9/02/15 → 12/02/15

存取文件

10.1117/12.2077806

其它文件與鏈接

Link to publication in Scopus

引用此

Marcon, D., Van Hove, M., De Jaeger, B., Posthuma, N., Wellekens, D., You, S., Kang, X., Wu, T.-L., Willems, M., Stoffels, S., & Decoutere, S. (2015). Direct comparison of GaN-based e-mode architectures (recessed MISHEMT and p-GaN HEMTs) processed on 200mm GaN-on-Si with Au-free technology. 於 J.-I. Chyi, H. Morkoc, & H. Fujioka (編輯), Gallium Nitride Materials and Devices X 文章 936311 (Proceedings of SPIE - The International Society for Optical Engineering; 卷 9363). SPIE. https://doi.org/10.1117/12.2077806

Marcon, Denis ; Van Hove, Marleen ; De Jaeger, Brice 等. / Direct comparison of GaN-based e-mode architectures (recessed MISHEMT and p-GaN HEMTs) processed on 200mm GaN-on-Si with Au-free technology. Gallium Nitride Materials and Devices X. 編輯 / Jen-Inn Chyi ; Hadis Morkoc ; Hiroshi Fujioka. SPIE, 2015. (Proceedings of SPIE - The International Society for Optical Engineering).

@inproceedings{8f9402e1416a45d1aa08ee8b28c09a45,

title = "Direct comparison of GaN-based e-mode architectures (recessed MISHEMT and p-GaN HEMTs) processed on 200mm GaN-on-Si with Au-free technology",

abstract = "Gallium nitride transistors are going to dominate the power semiconductor market in the coming years. The natural form of GaN-based devices is {"}normally-on{"} or depletion mode (d-mode). Despite these type of devices can be used in power semiconductor systems by means of special drivers or in a cascode package solution, yet the market demands for normally-off or enhancement mode (e-mode) devices. In this work, we directly compare and analyze the two most common approaches to obtain GaN-based e-mode devices: recessed gate MISHEMTs and p-GaN HEMTs. Both approaches have their pro's and con's as well as their critical process steps.",

keywords = "200mm GaN-on-Si, Au free, e-mode, GaN",

author = "Denis Marcon and {Van Hove}, Marleen and {De Jaeger}, Brice and Niels Posthuma and Dirk Wellekens and Shuzhen You and Xuanwu Kang and Tian-Li Wu and Maarten Willems and Steve Stoffels and Stefaan Decoutere",

year = "2015",

month = jan,

day = "1",

doi = "10.1117/12.2077806",

language = "English",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

editor = "Jen-Inn Chyi and Hadis Morkoc and Hiroshi Fujioka",

booktitle = "Gallium Nitride Materials and Devices X",

address = "美國",

note = "Gallium Nitride Materials and Devices X ; Conference date: 09-02-2015 Through 12-02-2015",

}

Marcon, D, Van Hove, M, De Jaeger, B, Posthuma, N, Wellekens, D, You, S, Kang, X, Wu, T-L, Willems, M, Stoffels, S & Decoutere, S 2015, Direct comparison of GaN-based e-mode architectures (recessed MISHEMT and p-GaN HEMTs) processed on 200mm GaN-on-Si with Au-free technology. 於 J-I Chyi, H Morkoc & H Fujioka (編輯), Gallium Nitride Materials and Devices X., 936311, Proceedings of SPIE - The International Society for Optical Engineering, 卷 9363, SPIE, Gallium Nitride Materials and Devices X, San Francisco, 美國, 9/02/15. https://doi.org/10.1117/12.2077806

Direct comparison of GaN-based e-mode architectures (recessed MISHEMT and p-GaN HEMTs) processed on 200mm GaN-on-Si with Au-free technology. / Marcon, Denis; Van Hove, Marleen; De Jaeger, Brice 等.
Gallium Nitride Materials and Devices X. 編輯 / Jen-Inn Chyi; Hadis Morkoc; Hiroshi Fujioka. SPIE, 2015. 936311 (Proceedings of SPIE - The International Society for Optical Engineering; 卷 9363).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - Direct comparison of GaN-based e-mode architectures (recessed MISHEMT and p-GaN HEMTs) processed on 200mm GaN-on-Si with Au-free technology

AU - Marcon, Denis

AU - Van Hove, Marleen

AU - De Jaeger, Brice

AU - Posthuma, Niels

AU - Wellekens, Dirk

AU - You, Shuzhen

AU - Kang, Xuanwu

AU - Wu, Tian-Li

AU - Willems, Maarten

AU - Stoffels, Steve

AU - Decoutere, Stefaan

PY - 2015/1/1

Y1 - 2015/1/1

N2 - Gallium nitride transistors are going to dominate the power semiconductor market in the coming years. The natural form of GaN-based devices is "normally-on" or depletion mode (d-mode). Despite these type of devices can be used in power semiconductor systems by means of special drivers or in a cascode package solution, yet the market demands for normally-off or enhancement mode (e-mode) devices. In this work, we directly compare and analyze the two most common approaches to obtain GaN-based e-mode devices: recessed gate MISHEMTs and p-GaN HEMTs. Both approaches have their pro's and con's as well as their critical process steps.

AB - Gallium nitride transistors are going to dominate the power semiconductor market in the coming years. The natural form of GaN-based devices is "normally-on" or depletion mode (d-mode). Despite these type of devices can be used in power semiconductor systems by means of special drivers or in a cascode package solution, yet the market demands for normally-off or enhancement mode (e-mode) devices. In this work, we directly compare and analyze the two most common approaches to obtain GaN-based e-mode devices: recessed gate MISHEMTs and p-GaN HEMTs. Both approaches have their pro's and con's as well as their critical process steps.

KW - 200mm GaN-on-Si

KW - Au free

KW - e-mode

KW - GaN

UR - http://www.scopus.com/inward/record.url?scp=84931858443&partnerID=8YFLogxK

U2 - 10.1117/12.2077806

DO - 10.1117/12.2077806

M3 - Conference contribution

AN - SCOPUS:84931858443

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Gallium Nitride Materials and Devices X

A2 - Chyi, Jen-Inn

A2 - Morkoc, Hadis

A2 - Fujioka, Hiroshi

PB - SPIE

T2 - Gallium Nitride Materials and Devices X

Y2 - 9 February 2015 through 12 February 2015

ER -

Marcon D, Van Hove M, De Jaeger B, Posthuma N, Wellekens D, You S 等. Direct comparison of GaN-based e-mode architectures (recessed MISHEMT and p-GaN HEMTs) processed on 200mm GaN-on-Si with Au-free technology. 於 Chyi JI, Morkoc H, Fujioka H, 編輯, Gallium Nitride Materials and Devices X. SPIE. 2015. 936311. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.2077806

Direct comparison of GaN-based e-mode architectures (recessed MISHEMT and p-GaN HEMTs) processed on 200mm GaN-on-Si with Au-free technology

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