DIRECT AND FOWLER-NORDHEIM TUNNELING IN THIN GATE OXIDE MOS STRUCTURE.

C. Chang*, R. W. Brodersen, Chen-Ming Hu

*此作品的通信作者

研究成果: Conference contribution同行評審

3 引文 斯高帕斯(Scopus)

摘要

Theoretical analysis and experimental measurements have been carried out on the tunneling characteristics of thin gate oxide (3. 4 nm-13. 7 nm) MOS capacitors. In the Fowler-Nordheim tunneling regime, it is theoretically found that the 2-band model yields an equivalent result as the 1-band model, i. e. , the Fowler-Nordheim equation. Constants B and A of the F-N Eq. are observed experimentally to be slightly thickness dependent. In the Direct tunneling regime, the 2-band model has been demonstrated to give a better fit to the experimental curves. Valence band electron tunneling is predicted theoretically using a 2-band model and measured experimentally as the substrate hole current in a 5. 6 nm oxide transistor.

原文English
主出版物標題Unknown Host Publication Title
編輯J.F. Verweij, D.R. Wolters
發行者North-Holland
頁面176-180
頁數5
ISBN(列印)044486735X
出版狀態Published - 1 十二月 1983

指紋

深入研究「DIRECT AND FOWLER-NORDHEIM TUNNELING IN THIN GATE OXIDE MOS STRUCTURE.」主題。共同形成了獨特的指紋。

引用此