摘要
We demonstrate what we believe to be the first use of AlGaInAs quantum wells (QWs) as a saturable absorber for a diode-pumped passively mode locked Nd: YVO4 laser at 1342 nm. The QWs are grown on a Fedoped InP substrate that is transparent at lasing wavelength. At an incident pump power of 13.5 W an average output power of 1.05 W with a continuous mode-locked pulse duration of 26.4 ps at a repetition rate of 152 MHz was generated.
原文 | English |
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頁(從 - 到) | 2348-2350 |
頁數 | 3 |
期刊 | Optics Letters |
卷 | 34 |
發行號 | 15 |
DOIs | |
出版狀態 | Published - 1 8月 2009 |