Diode-pumped passively mode-locked 1342 nm Nd: YVO4 laser with an AlGaInAs quantum-well saturable absorber

S. C. Huang, H. L. Cheng, Yi Fan Chen, Kuan-Wei Su, Yung-Fu Chen, Kai-Feng Huang

研究成果: Article同行評審

27 引文 斯高帕斯(Scopus)

摘要

We demonstrate what we believe to be the first use of AlGaInAs quantum wells (QWs) as a saturable absorber for a diode-pumped passively mode locked Nd: YVO4 laser at 1342 nm. The QWs are grown on a Fedoped InP substrate that is transparent at lasing wavelength. At an incident pump power of 13.5 W an average output power of 1.05 W with a continuous mode-locked pulse duration of 26.4 ps at a repetition rate of 152 MHz was generated.

原文English
頁(從 - 到)2348-2350
頁數3
期刊Optics Letters
34
發行號15
DOIs
出版狀態Published - 1 8月 2009

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