Dimensional effects on the reliability of polycrystalline silicon thin-film transistors

Hsiao-Wen Zan^*, P. S. Shih, T. C. Chang, C. Y. Chang

^*此作品的通信作者

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

原文	English
頁（從 - 到）	1479-1483
頁數	5
期刊	Microelectronics Reliability
卷	40
發行號	8-10
DOIs	https://doi.org/10.1016/S0026-2714(00)00165-7
出版狀態	Published - 1 1月 2000

存取文件

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title = "Dimensional effects on the reliability of polycrystalline silicon thin-film transistors",

author = "Hsiao-Wen Zan and Shih, {P. S.} and Chang, {T. C.} and Chang, {C. Y.}",

year = "2000",

month = jan,

day = "1",

doi = "10.1016/S0026-2714(00)00165-7",

language = "English",

volume = "40",

pages = "1479--1483",

journal = "Microelectronics Reliability",

issn = "0026-2714",

publisher = "Elsevier Ltd",

number = "8-10",

}

TY - JOUR

T1 - Dimensional effects on the reliability of polycrystalline silicon thin-film transistors

AU - Zan, Hsiao-Wen

AU - Shih, P. S.

AU - Chang, T. C.

AU - Chang, C. Y.

PY - 2000/1/1

Y1 - 2000/1/1

UR - http://www.scopus.com/inward/record.url?scp=16344382380&partnerID=8YFLogxK

U2 - 10.1016/S0026-2714(00)00165-7

DO - 10.1016/S0026-2714(00)00165-7

M3 - Article

AN - SCOPUS:16344382380

SN - 0026-2714

VL - 40

SP - 1479

EP - 1483

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 8-10

ER -