Dimensional effects on the drain current of N- and P-channel polycrystalline silicon thin film transistors

Po Sheng Shih*, Hsiao-Wen Zan, Ting Chang Chang, Tiao Yuan Huang, Chun Yen Chang

*此作品的通信作者

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

N-channel and p-channel polysilicon thin film transistors (poly-Si TFTs) with different geometries were fabricated and characterized to study the interactive effects of active channel area on drain current. We find that for both non-passivated and passivated p-TFTs, since no avalanche multiplication is involved, the drain current is increased with reduced active channel area due to the reduction of grain-boundary trap density. In contrast, a somewhat unexpected trap dependence of the kink effect is observed in n-TFTs. Consequently, the dependence of active channel area on drain current differs between non-passivated n-TFTs with large trap density and passivated n-TFTs with small trap density.

原文English
頁(從 - 到)3879-3882
頁數4
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
39
發行號7 A
DOIs
出版狀態Published - 7月 2000

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