Diluted low dielectric constant materials as bottom antireflective coating layers for both KrF and ArF lithography

H. L. Chen; W. C. Chao; Fu-Hsiang Ko; T. C. Chu; H. C. Cheng

doi:10.1109/IMNC.2002.1178637

Diluted low dielectric constant materials as bottom antireflective coating layers for both KrF and ArF lithography

H. L. Chen, W. C. Chao, Fu-Hsiang Ko, T. C. Chu, H. C. Cheng

材料科學與工程學系

研究成果: Conference contribution › 同行評審

摘要

For reduction interconnect signal delay, low dielectric constant (K) materials are being introduced to replace conventional dielectrics in next generation IC technologies. In the advanced lithography processes, a bottom antireflective coating (BARC) layer for patterning low-K materials is essential. Nitride-based (silicon nitride, silicon oxynitride) films have been demonstrated to have suitable optical characteristics for both KrF and ArF lithography BARC applications. However, dielectric constants of nitride films are about 4∼8. Therefore, the nitride films should be removed after pattering low-K materials. Here we demonstrate low-K materials for both KrF and ArF lithography BARC applications. The antireflective layer is composed of diluted low-K materials, such as BCB, FLARE, and SiLK.

原文	English
主出版物標題	2002 International Microprocesses and Nanotechnology Conference, MNC 2002
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	250-251
頁數	2
ISBN（電子）	4891140313, 9784891140311
DOIs	https://doi.org/10.1109/IMNC.2002.1178637
出版狀態	Published - 1 1月 2002
事件	International Microprocesses and Nanotechnology Conference, MNC 2002 - Tokyo, Japan 持續時間: 6 11月 2002 → 8 11月 2002

出版系列

名字	2002 International Microprocesses and Nanotechnology Conference, MNC 2002

Conference

Conference	International Microprocesses and Nanotechnology Conference, MNC 2002
國家/地區	Japan
城市	Tokyo
期間	6/11/02 → 8/11/02

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10.1109/IMNC.2002.1178637

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Chen, H. L., Chao, W. C., Ko, F.-H., Chu, T. C., & Cheng, H. C. (2002). Diluted low dielectric constant materials as bottom antireflective coating layers for both KrF and ArF lithography. 於 2002 International Microprocesses and Nanotechnology Conference, MNC 2002 (頁 250-251). 文章 1178637 (2002 International Microprocesses and Nanotechnology Conference, MNC 2002). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMNC.2002.1178637

Chen, H. L. ; Chao, W. C. ; Ko, Fu-Hsiang 等. / Diluted low dielectric constant materials as bottom antireflective coating layers for both KrF and ArF lithography. 2002 International Microprocesses and Nanotechnology Conference, MNC 2002. Institute of Electrical and Electronics Engineers Inc., 2002. 頁 250-251 (2002 International Microprocesses and Nanotechnology Conference, MNC 2002).

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title = "Diluted low dielectric constant materials as bottom antireflective coating layers for both KrF and ArF lithography",

abstract = "For reduction interconnect signal delay, low dielectric constant (K) materials are being introduced to replace conventional dielectrics in next generation IC technologies. In the advanced lithography processes, a bottom antireflective coating (BARC) layer for patterning low-K materials is essential. Nitride-based (silicon nitride, silicon oxynitride) films have been demonstrated to have suitable optical characteristics for both KrF and ArF lithography BARC applications. However, dielectric constants of nitride films are about 4∼8. Therefore, the nitride films should be removed after pattering low-K materials. Here we demonstrate low-K materials for both KrF and ArF lithography BARC applications. The antireflective layer is composed of diluted low-K materials, such as BCB, FLARE, and SiLK.",

author = "Chen, {H. L.} and Chao, {W. C.} and Fu-Hsiang Ko and Chu, {T. C.} and Cheng, {H. C.}",

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Chen, HL, Chao, WC, Ko, F-H, Chu, TC & Cheng, HC 2002, Diluted low dielectric constant materials as bottom antireflective coating layers for both KrF and ArF lithography. 於 2002 International Microprocesses and Nanotechnology Conference, MNC 2002., 1178637, 2002 International Microprocesses and Nanotechnology Conference, MNC 2002, Institute of Electrical and Electronics Engineers Inc., 頁 250-251, International Microprocesses and Nanotechnology Conference, MNC 2002, Tokyo, Japan, 6/11/02. https://doi.org/10.1109/IMNC.2002.1178637

Diluted low dielectric constant materials as bottom antireflective coating layers for both KrF and ArF lithography. / Chen, H. L.; Chao, W. C.; Ko, Fu-Hsiang 等.
2002 International Microprocesses and Nanotechnology Conference, MNC 2002. Institute of Electrical and Electronics Engineers Inc., 2002. p. 250-251 1178637 (2002 International Microprocesses and Nanotechnology Conference, MNC 2002).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - Diluted low dielectric constant materials as bottom antireflective coating layers for both KrF and ArF lithography

AU - Chen, H. L.

AU - Chao, W. C.

AU - Ko, Fu-Hsiang

AU - Chu, T. C.

AU - Cheng, H. C.

PY - 2002/1/1

Y1 - 2002/1/1

N2 - For reduction interconnect signal delay, low dielectric constant (K) materials are being introduced to replace conventional dielectrics in next generation IC technologies. In the advanced lithography processes, a bottom antireflective coating (BARC) layer for patterning low-K materials is essential. Nitride-based (silicon nitride, silicon oxynitride) films have been demonstrated to have suitable optical characteristics for both KrF and ArF lithography BARC applications. However, dielectric constants of nitride films are about 4∼8. Therefore, the nitride films should be removed after pattering low-K materials. Here we demonstrate low-K materials for both KrF and ArF lithography BARC applications. The antireflective layer is composed of diluted low-K materials, such as BCB, FLARE, and SiLK.

AB - For reduction interconnect signal delay, low dielectric constant (K) materials are being introduced to replace conventional dielectrics in next generation IC technologies. In the advanced lithography processes, a bottom antireflective coating (BARC) layer for patterning low-K materials is essential. Nitride-based (silicon nitride, silicon oxynitride) films have been demonstrated to have suitable optical characteristics for both KrF and ArF lithography BARC applications. However, dielectric constants of nitride films are about 4∼8. Therefore, the nitride films should be removed after pattering low-K materials. Here we demonstrate low-K materials for both KrF and ArF lithography BARC applications. The antireflective layer is composed of diluted low-K materials, such as BCB, FLARE, and SiLK.

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Chen HL, Chao WC, Ko FH, Chu TC, Cheng HC. Diluted low dielectric constant materials as bottom antireflective coating layers for both KrF and ArF lithography. 於 2002 International Microprocesses and Nanotechnology Conference, MNC 2002. Institute of Electrical and Electronics Engineers Inc. 2002. p. 250-251. 1178637. (2002 International Microprocesses and Nanotechnology Conference, MNC 2002). doi: 10.1109/IMNC.2002.1178637

Diluted low dielectric constant materials as bottom antireflective coating layers for both KrF and ArF lithography

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