Digital readout optimization of the random resistive states in magnetic tunnel junction

Thomas Egler, Hans Dittmann, Artur Useinov*

*此作品的通信作者

研究成果: Article同行評審

摘要

True random number generators (TRNGs) provide a wide area of applications and can be fabricated on the basis of magnetic tunnel junctions (MTJs). This work represents the modeling of TRNG readout optimization, where the induced digital random bit is detected within only a single computational period. The period contains two sub-cycles: write and joined read & reset cycles. The system has a valuable potential to become stochastically independent after calibrating at the desired working point against the factors, which cause to the signal deviations: temperature-induced, material degradation or other problems.

原文English
文章編號107666
頁(從 - 到)1-4
頁數4
期刊Solid-State Electronics
163
DOIs
出版狀態Published - 1月 2020

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