@inproceedings{de77c89db3774b46955b6e99def7e947,
title = "Digital Gate Driving (DGD) is Double-Edged Sword: How to Avoid Huge Voltage Overshoots Caused by DGD for GaN FETs",
abstract = "In this paper, a problem of huge voltage overshoots (V OVERSHOOT ) of VDS in GaN FETs, which rarely happens during an automatic search of optimum gate driving parameters in a digital gate driving (DGD), is clarified for the first time, and a solution to avoid the problem is proposed. The highest V OVERSHOOT in 165k measurements, where parameters of 6-bit DGD IC in 6 time slots in 3.3-ns time intervals are randomly changed in the turn-off of GaN FET at 20 V and 10 A, is 27.6 V, which is 115% larger than the conventional single-step gate driving (CSG) and is almost equal to the maximum rated voltage of the GaNFET. To solve the problem, a safe and fast search method of optimum parameters for DGD is proposed, which achieved 61% reduction of the switching loss and 59% reduction of V OVERSHOOT compared with CSG. ",
keywords = "digital gate drive, GaN FET, overshoot, switching loss",
author = "Ryunosuke Katada and Katsuhiro Hata and Yoshitaka Yamauchi and Wang, {Ting Wei} and Ryuzo Morikawa and Wu, {Cheng Hsuan} and Toru Sai and Chen, {Po Hung} and Makoto Takamiya",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 13th IEEE Energy Conversion Congress and Exposition, ECCE 2021 ; Conference date: 10-10-2021 Through 14-10-2021",
year = "2021",
doi = "10.1109/ECCE47101.2021.9595264",
language = "English",
series = "2021 IEEE Energy Conversion Congress and Exposition, ECCE 2021 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "5412--5416",
booktitle = "2021 IEEE Energy Conversion Congress and Exposition, ECCE 2021 - Proceedings",
address = "美國",
}
