Digital Gate Driving (DGD) is Double-Edged Sword: How to Avoid Huge Voltage Overshoots Caused by DGD for GaN FETs

Ryunosuke Katada, Katsuhiro Hata, Yoshitaka Yamauchi, Ting Wei Wang, Ryuzo Morikawa, Cheng Hsuan Wu, Toru Sai, Po Hung Chen, Makoto Takamiya

研究成果: Conference contribution同行評審

3 引文 斯高帕斯(Scopus)

摘要

In this paper, a problem of huge voltage overshoots (V OVERSHOOT ) of VDS in GaN FETs, which rarely happens during an automatic search of optimum gate driving parameters in a digital gate driving (DGD), is clarified for the first time, and a solution to avoid the problem is proposed. The highest V OVERSHOOT in 165k measurements, where parameters of 6-bit DGD IC in 6 time slots in 3.3-ns time intervals are randomly changed in the turn-off of GaN FET at 20 V and 10 A, is 27.6 V, which is 115% larger than the conventional single-step gate driving (CSG) and is almost equal to the maximum rated voltage of the GaNFET. To solve the problem, a safe and fast search method of optimum parameters for DGD is proposed, which achieved 61% reduction of the switching loss and 59% reduction of V OVERSHOOT compared with CSG.

原文English
主出版物標題2021 IEEE Energy Conversion Congress and Exposition, ECCE 2021 - Proceedings
發行者Institute of Electrical and Electronics Engineers Inc.
頁面5412-5416
頁數5
ISBN(電子)9781728151359
DOIs
出版狀態Published - 2021
事件13th IEEE Energy Conversion Congress and Exposition, ECCE 2021 - Virtual, Online, Canada
持續時間: 10 10月 202114 10月 2021

出版系列

名字2021 IEEE Energy Conversion Congress and Exposition, ECCE 2021 - Proceedings

Conference

Conference13th IEEE Energy Conversion Congress and Exposition, ECCE 2021
國家/地區Canada
城市Virtual, Online
期間10/10/2114/10/21

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