Diffusion-controlled effects of luminescent efficiency in InGaN/GaN light-emitting diodes

Y. S. Wang*, N. C. Chen, Jenn-Fang Chen

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

Temperature dependence of photoluminescence (PL) and time-resolved photoluminescence (TRPL) were used to investigate the recombination process in InGaN/GaN light-emitting diodes (LEDs). The results exhibited that the nonradiative recombination process can be explained by diffusion-controlled kinetic.

原文English
主出版物標題Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011
頁面1222-1224
頁數3
DOIs
出版狀態Published - 1 十二月 2011
事件Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011 - Sydney, Australia
持續時間: 28 八月 20111 九月 2011

出版系列

名字Optics InfoBase Conference Papers
ISSN(電子)2162-2701

Conference

ConferenceConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011
國家/地區Australia
城市Sydney
期間28/08/111/09/11

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