Diffusion bonding of GaAs wafers for nonlinear optics applications

D. Zheng; L. A. Gordon; Yew-Chuhg Wu; R. K. Route; M. M. Fejer; R. L. Byer; R. S. Feigelson

doi:10.1149/1.1837608

Diffusion bonding of GaAs wafers for nonlinear optics applications

D. Zheng^*, L. A. Gordon, Yew-Chuhg Wu, R. K. Route, M. M. Fejer, R. L. Byer, R. S. Feigelson

^*此作品的通信作者

材料科學與工程學系

研究成果: Article › 同行評審

14 引文斯高帕斯（Scopus）

摘要

Diffusion-bonded stacked periodic structures represent a new family of optical materials with spatially patterned nonlinear properties. The bonding process preserves both the optical and mechanical properties of the bulk materials. GaAs devices up to 20 layers were diffusion bonded and characterized. Optical loss was from interfacial voids and gaps at shorter wavelengths and from processing-induced p-type free carrier absorption at longer wavelengths.

原文	English
頁（從 - 到）	1439-1441
頁數	3
期刊	Journal of the Electrochemical Society
卷	144
發行號	4
DOIs	https://doi.org/10.1149/1.1837608
出版狀態	Published - 1 1月 1997

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AU - Wu, Yew-Chuhg

AU - Route, R. K.

AU - Fejer, M. M.

AU - Byer, R. L.

AU - Feigelson, R. S.

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AB - Diffusion-bonded stacked periodic structures represent a new family of optical materials with spatially patterned nonlinear properties. The bonding process preserves both the optical and mechanical properties of the bulk materials. GaAs devices up to 20 layers were diffusion bonded and characterized. Optical loss was from interfacial voids and gaps at shorter wavelengths and from processing-induced p-type free carrier absorption at longer wavelengths.

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Diffusion bonding of GaAs wafers for nonlinear optics applications

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