Diffusion bonding of GaAs wafers for nonlinear optics applications

D. Zheng*, L. A. Gordon, Yew-Chuhg Wu, R. K. Route, M. M. Fejer, R. L. Byer, R. S. Feigelson

*此作品的通信作者

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

Diffusion-bonded stacked periodic structures represent a new family of optical materials with spatially patterned nonlinear properties. The bonding process preserves both the optical and mechanical properties of the bulk materials. GaAs devices up to 20 layers were diffusion bonded and characterized. Optical loss was from interfacial voids and gaps at shorter wavelengths and from processing-induced p-type free carrier absorption at longer wavelengths.

原文English
頁(從 - 到)1439-1441
頁數3
期刊Journal of the Electrochemical Society
144
發行號4
DOIs
出版狀態Published - 1 一月 1997

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