Platinum silicide forms a high barrier height Schottky barrier diode to silicon, and aluminum is used as a low resistance metallization. During conventional heat treatment (sintering) of the Al/PtSi/Si structure at temperatures around 450 degree C, penetration of Al into PtSi occurs and, after a longer time, Al can penetrate into the interface between PtSi and Si. This reduces the barrier height. In order to overcome this problem, diffusion barriers, such as TiW, CrO//x, or TiN//x, are deposited between the PtSi layer and the Al layer.
|頁（從 - 到）||3708-3709|
|期刊||IBM technical disclosure bulletin|
|出版狀態||Published - 1 12月 1984|