DIFFUSION BARRIER FOR PtSi/Si STRUCTURES.

M. Eizenberg*, J. W. Mayer, King-Ning Tu

*此作品的通信作者

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摘要

Platinum silicide forms a high barrier height Schottky barrier diode to silicon, and aluminum is used as a low resistance metallization. During conventional heat treatment (sintering) of the Al/PtSi/Si structure at temperatures around 450 degree C, penetration of Al into PtSi occurs and, after a longer time, Al can penetrate into the interface between PtSi and Si. This reduces the barrier height. In order to overcome this problem, diffusion barriers, such as TiW, CrO//x, or TiN//x, are deposited between the PtSi layer and the Al layer.

原文English
頁(從 - 到)3708-3709
頁數2
期刊IBM technical disclosure bulletin
27
發行號7 A
出版狀態Published - 1 12月 1984

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