Dielectric properties of metal-organic chemical vapor deposited highly textured Pb(ScTa)1-xTixO3 (x=0-0.3) relaxor ferroelectric thin films on LaNiO3 electrode buffered Si

Chun-Hsiung Lin*, S. W. Lee, Haydn Chen, T. B. Wu

*此作品的通信作者

研究成果: Article同行評審

12 引文 斯高帕斯(Scopus)

摘要

Highly (100) textured Pb(ScTa)1-xTixO3 (x=0-0.3) thin films were grown on LaNiO3/Pt/Ti electrode-coated Si substrate using metal-organic chemical vapor deposition at 685°C. Ti addition was introduced to modify the dielectric properties. Diffuse phase transition, typical of relaxor ferroelectrics was noticed. As Ti content increased from 0% to 30%, the phase transition temperature (Tmax) gradually shifted from -10 to 120°C with the dielectric constant at Tmax increased from 1397 to 1992 (1 kHz). Loss tangent values are generally below 0.025.

原文English
頁(從 - 到)2485-2487
頁數3
期刊Applied Physics Letters
75
發行號16
DOIs
出版狀態Published - 18 10月 1999

指紋

深入研究「Dielectric properties of metal-organic chemical vapor deposited highly textured Pb(ScTa)1-xTixO3 (x=0-0.3) relaxor ferroelectric thin films on LaNiO3 electrode buffered Si」主題。共同形成了獨特的指紋。

引用此