@article{ef8dbe6cade44623946cd878918874d7,
title = "Dielectric Layer Design of Bilayer Ferroelectric and Antiferroelectric Tunneling Junctions Toward 3D NAND-Compatible Architecture",
abstract = "The 3D vertical ferroelectric tunneling junction (FTJ) of bilayer antiferroelectric (AFE) Hf1-xZrxO2(HZO) and Al2O3 has been demonstrated for NAND-compatible feasibility. A bilayer-type FTJ is explored for the designs of the dielectric interlayer Al2O3 0 nm to 4 nm and the ferroelectric type, while the current mechanism is revealed. The multilevel AFE-FTJ is exhibited for both the Program and Erase operations and realizes a synaptic device. High-density emerging memory and computing-in-memory (CiM) are in high demanded for the future era and can be feasible by the proposed vertical FTJ.",
keywords = "Ferroelectric, antiferroelectric",
author = "Hsiang, {K. Y.} and Liao, {C. Y.} and Liu, {J. H.} and Lin, {C. Y.} and Lee, {J. Y.} and Lou, {Z. F.} and Chang, {F. S.} and Ray, {W. C.} and Li, {Z. X.} and Tseng, {H. C.} and Wang, {C. C.} and Liao, {M. H.} and Hou, {T. H.} and Lee, {M. H.}",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.",
year = "2022",
month = nov,
day = "1",
doi = "10.1109/LED.2022.3204445",
language = "English",
volume = "43",
pages = "1850--1853",
journal = "Ieee Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "11",
}