Dielectric Constant and van der Waals Interlayer Interaction of MoS2-Graphene Heterostructures

Amit Singh, Seunghan Lee, Hoonkyung Lee, Hiroshi Watanabe

研究成果: Conference contribution同行評審

6 引文 斯高帕斯(Scopus)

摘要

The dielectric screening is one of the most fundamental properties of 2D materials which is used to characterize electronic properties such as storage capacity of charge or energy. We numerically investigate three potential heterostructures of MoS2-Graphene and their corresponding interlayer interactions. Applying a density-functional approach to the lowest energy structure of the interlayer, we find that, within a lower field regime (≲ 10 MV/cm), the dielectric constant is independent of the vertical electric field and dependent of the interlayer distance and stacking pattern of heterostructures composed of MoS2 and Graphene. From the calculation results of the induced charge throughout the heterostructure, we find how the van der Waals interaction influences the dielectric constant.

原文English
主出版物標題15th IEEE International Conference on Nano/Micro Engineered and Molecular System, NEMS 2020
發行者Institute of Electrical and Electronics Engineers Inc.
頁面490-494
頁數5
ISBN(電子)9781728172309
DOIs
出版狀態Published - 27 9月 2020
事件15th IEEE International Conference on Nano/Micro Engineered and Molecular System, NEMS 2020 - Virtual, San Diego, 美國
持續時間: 27 9月 202030 9月 2020

出版系列

名字15th IEEE International Conference on Nano/Micro Engineered and Molecular System, NEMS 2020

Conference

Conference15th IEEE International Conference on Nano/Micro Engineered and Molecular System, NEMS 2020
國家/地區美國
城市Virtual, San Diego
期間27/09/2030/09/20

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